现行

BS ISO 17331-2004+A1-2010

Surface chemical analysis. Chemical methods for the collection of elements from the surface of silicon-wafer working reference materials and their determination by total-reflection X-ray fluorescence (TXRF) spectroscopy
表面化学分析 硅片工作标准物质表面元素收集的化学方法及其全反射X射线荧光光谱测定

2010-09-30

现行

ISO 17331-2004

Surface chemical analysis — Chemical methods for the collection of elements from the surface of silicon-wafer working reference materials and their determination by total-reflection X-ray fluorescence (TXRF) spectroscopy
表面化学分析——硅片工作标准物质表面元素收集的化学方法及其全反射X射线荧光光谱测定

2004-05-18

现行

ISO 17331-2004/Amd 1-2010

Surface chemical analysis — Chemical methods for the collection of elements from the surface of silicon-wafer working reference materials and their determination by total-reflection X-ray fluorescence (TXRF) spectroscopy — Amendment 1
表面化学分析.硅片工作标准物质表面元素收集及其全反射X射线荧光光谱测定的化学方法.修改件1

2010-07-05

现行

GB/T 39527-2020

实体面材产品中钙、铝、硅元素含量的测定 化学分析法
Determination of calcium, aluminium and silicon in the solid surface materials—Method of chemical analysis

2020-12-14

现行

BS ISO 17560-2014

Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth profiling of boron in silicon
表面化学分析 二次离子质谱法 硅中硼的深度剖面分析方法

2014-09-30

现行

ISO/TS 22933-2022

Surface chemical analysis — Secondary ion mass spectrometry — Method for the measurement of mass resolution in SIMS
表面化学分析.二次离子质谱法.模拟离子质谱中质量分辨率的测量方法

2022-04-01

现行

BS PD ISO/TR 19319-2013

Surface chemical analysis. Fundamental approaches to determination of lateral resolution and sharpness in beam-based methods
表面化学分析 基于波束的方法中确定横向分辨率和锐度的基本方法

2013-03-31

现行

BS ISO 12406-2010

Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth profiling of arsenic in silicon
表面化学分析 二次离子质谱法 硅中砷的深度分析方法

2010-11-30

现行

GB/T 32495-2016

表面化学分析 二次离子质谱 硅中砷的深度剖析方法
Surface chemical analysis—Secondary-ion mass spectrometry—Method for depth profiling of arsenic in silicon

2016-02-24

现行

GB/T 40109-2021

表面化学分析 二次离子质谱 硅中硼深度剖析方法
Surface chemical analysis—Secondary-ion mass spectrometry—Method for depth profiling of boron in silicon

2021-05-21

现行

ISO/TR 19319-2013

Surface chemical analysis — Fundamental approaches to determination of lateral resolution and sharpness in beam-based methods
表面化学分析——基于波束的方法中确定横向分辨率和锐度的基本方法

2013-03-06

现行

ISO 12406-2010

Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of arsenic in silicon
表面化学分析——二次离子质谱法——硅中砷的深度剖面分析方法

2010-11-08

现行

ISO 17560-2014

Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in silicon
表面化学分析 - 二次离子质谱法 - 硅在硅中深度分析的方法

2014-09-10

现行

GB/T 38114-2019

纳米技术 石墨烯材料表面含氧官能团的定量分析 化学滴定法
Nanotechnologies—Quantitative analysis of the surface oxygen functional groups on graphene materials—Chemical titration method

2019-10-18

现行

BS ISO 29081-2010

Surface chemical analysis. Auger electron spectroscopy. Reporting of methods used for charge control and charge correction
表面化学分析 俄歇电子能谱 报告用于充电控制和充电校正的方法

2010-02-28

现行

GB/T 32998-2016

表面化学分析 俄歇电子能谱 荷电控制与校正方法报告的规范要求
Surface chemical analysis—Auger electron spectroscopy—Reporting of methods used for charge control and charge correction

2016-10-13

现行

ISO 29081-2010

Surface chemical analysis — Auger electron spectroscopy — Reporting of methods used for charge control and charge correction
表面化学分析——俄歇电子能谱；报告用于充电控制和充电校正的方法

2010-02-05

现行

AS ISO 19318-2006

Surface chemical analysis - X-ray photoelectron spectroscopy - Reporting of methods used for charge control and charge correction
表面化学分析.X射线光电子能谱.电荷控制和电荷校正方法的报告

2006-10-20

现行

BS ISO 19318-2021

Surface chemical analysis. X-ray photoelectron spectroscopy. Reporting of methods used for charge control and charge correction
表面化学分析 X射线光电子能谱 报告用于充电控制和充电校正的方法

2021-06-16

现行

KS D ISO 19318(2020 Confirm)

표면 화학 분석－X선 광전자 분광법－전하 제어와 전하 교정에 사용하는 방법
表面化学分析X射线光电子能谱电荷控制和电荷校正方法报告

2005-12-28