IEC TR 62878-2-8:2021（E）描述了有源器件嵌入基板的翘曲控制，以及用于确定翘曲的参数，这些参数在封装组装期间非常有用。对于典型的芯片嵌入基板，使用翘曲驱动力、电阻和中性轴来解释翘曲结果，其中离散的有源芯片放置在基板的核心中，并通过直接铜键合与基板互连。同样的原理也适用于其他设备嵌入式基板。尽管其他设备嵌入基板的详细结构可能不同，但翘曲参数的来源和确定是相同的，因此本报告的目的是帮助工程师应用这一原理改善其产品的翘曲行为。

IEC TR 62878-2-8:2021(E) describes a warpage control of active device embedded substrate along with parameters for determining warpage, which are useful during package assembly. Warpage results are explained using warpage driving force, resistance and neutral axis, for typical die embedded substrate, where the discrete active dies are placed in the core of substrate and interconnected to the substrate by direct Cu bonding. The same principles are applicable in other device embedded substrates. Even though the detailed structure of other device embedded substrates might be different, the origin and determination of the parameters of warpage are the same and thus the purpose of this report is to help engineers improve the warpage behaviours of their products by applying this principle.