MIL MIL-PRF-19500/117R Amendment 2(all prev amd incorp.)-半导体器件二极管硅电压调节器 1N962B-1至1N992B-1型和1N962BUR-1至1N992BUR-1型 1N962C-1至1N992C-1型和1N962CUR-1至1N995CUR-1型以及1N962D-1至1N992D-1型 1N962DUR-1至1N992DUR-1型 JAN JANTX JANTXV JANHC和JANKC-国家数字标准馆

现行 MIL MIL-PRF-19500/117R Amendment 2(all prev amd incorp.)

到馆提醒

收藏跟踪

购买正版

Semiconductor Devices, Diode, Silicon, Voltage Regulator, Types 1N962B- 1 through 1N992B-1, and 1N962BUR-1 through 1N992BUR-1, 1N962C-1 through 1N992C-1, and 1N962CUR-1 through 1N992CUR-1, and 1N962D-1 through 1N992D-1, 1N962DUR-1 through 1N992DUR-1, JAN, JANTX, JANTXV, JANHC and JANKC 半导体器件二极管硅电压调节器 1N962B-1至1N992B-1型和1N962BUR-1至1N992BUR-1型 1N962C-1至1N992C-1型和1N962CUR-1至1N995CUR-1型以及1N962D-1至1N992D-1型 1N962DUR-1至1N992DUR-1型 JAN JANTX JANTXV JANHC和JANKC

发布日期： 2014-03-26

本规范涵盖了电压公差为5%、2%和1%的500毫瓦硅调压二极管的性能要求。按照MIL-PRF-19500的规定，为每种封装设备类型提供三个级别的产品保证。为每种未封装的设备类型提供一个级别的产品保证。

This specification covers the performance requirements for 500 milliwatt, silicon, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. One level of product assurance is provided for each unencapsulated device type.

分类信息

发布单位或类别：美国-美国军事规范和标准

关联关系

研制信息

相似标准/计划/法规

SJ 50033/26-1994

半导体分立器件２ＣＷ１００６～２ＣＷ１０１５型硅电压调整二极管详细规范
Semiconductor discrete device--Detail specification for type 2CW1006~2CW1015 silicon voltage-regulator diode

SJ 50033/25-1994

半导体分立器件２ＣＷ１００１～２ＣＷ１００５型硅电压调整二极管详细规范
Semiconductor discrete device--Detail specification for type 2CW1001~2CW1005 silicon voltage-regulator diode

SJ 50033/161-2002

半导体分立器件 2CW210~251型硅电压调整二极管详细规范
Semiconductor discrete device Detail specification for silicon voltage-regulator diode for type 2CW210~251

SJ 50033/150-2002

半导体分立器件 2DW230~236型硅电压基准二极管详细规范
Semiconductor discrete device Detail specification for silicon voltage-regulator diode for type 2DW230~236

半导体分立器件２ＣＷ３０１６～３０５１型电压调整二极管详细规范
Semiconductor discrete device--Detail specification for silicon voltage regulate diodes for Types 2CWl3016～3051

半导体分立器件２ＣＷ２９７０～３０１５型硅电压调整二极管详细规范
Semiconductor discrete device--Detail specification for silicon voltage regulate diodes for Types 2CW2970～3015

SJ 50033/151-2002

半导体分立器件 2DW14~18型低噪声硅电压基准二极管详细规范
Semiconductor discrete device Detail specification for low-noise silicon voltage-regulator diodes for types 2DW14~18

SJ 50033/144-1999

半导体分立器件2CW50~78型玻璃钝化封装硅电压调整二极管详细规范
Semiconductor discrete devices Detail specification for types 2CW50~78 glass passivation package Silicon voltage-regulator diodes

半导体分立器件２ＤＷ２３２～２３６型硅电压基准二极管详细规范
Semiconductor discrete device--Detail specification for silicon voltage reference diodes for Types 2DW232～236

MIL MIL-PRF-19500/124H Notice 1-Amendment 1

SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR B AND RB TYPES 1N2970 THROUGH 1N2977, (SUPERSEDING MIL-S-19500/124G)
半导体器件、二极管、硅、电压调节器B和RB类型1N2970至1n22977（取代MIL-S-19500/124G）

MIL MIL-PRF-19500/124H Notice 2-Validation 1

SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR B AND RB TYPES 1N2970 THROUGH 1N2977, (SUPERSEDING MIL-S-19500/124G)
半导体器件、二极管、硅、电压调节器B和RB类型1N2970至1n22977（取代MIL-S-19500/124G）

MIL MIL-PRF-19500/124M

SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR B AND RB TYPES 1N2970 THROUGH 1N2977, (SUPERSEDING MIL-S-19500/124L)
半导体器件、二极管、硅、电压调节器B和RB类型1N2970至1N2977（取代MIL-S-19500/124L）

半导体分立器件２ＤＷ１４～１８型低噪声硅电压基准二极管详细规范
Semiconductor discrete device--Detail specification for lower noise for silicon voltage reference diode for Type 2DW14～18

MIL MIL-PRF-19500/383B Notice 3-Validation

Semiconductor Device, Diode, Silicon, Voltage-Variable Capacitor Types 1N5139A through 1N5148A JAN, JANTX and JANTXV
半导体器件二极管硅电压可变电容器类型1N5139A至1N5148A JAN JANTX和JANTXV

MIL MIL-PRF-19500/383B Notice 2-Validation

Semiconductor Device, Diode, Silicon, Voltage-Variable Capacitor Types 1N5139A through 1N5148A JAN, JANTX and JANTXV
半导体器件二极管硅电压可变电容器类型1N5139A至1N5148A JAN JANTX和JANTXV

MIL MIL-PRF-19500/552F Amendment 1(amendment incorporated)

Semiconductor Device, Diode, Silicon, Transient Voltage Suppressor, Types 1N6469 through 1N6476, JAN, JANTX, and JANTXV
半导体器件二极管硅瞬态电压抑制器 1N6469至1N6476型 JAN JANTX和JANTXV型

MIL MIL-PRF-19500/552J

Semiconductor Device, Diode, Silicon, Transient Voltage Suppressor, Types 1N6469 through 1N6476, JAN, JANTX, and JANTXV
半导体器件二极管硅瞬态电压抑制器 1N6469至1N6476型 JAN JANTX和JANTXV型

MIL MIL-PRF-19500/507F Amendment 1(amendment incorporated)

Semiconductor Device, Diode, Silicon, Bipolar Transient Voltage Suppressor, Types 1N6036A through 1N6072A JAN, JANTX, and JANTXV
半导体器件二极管硅双极瞬态电压抑制器 1N6036A至1N6072A JAN JANTX和JANTXV型

MIL MIL-PRF-19500/434E Amendment 2(all prev amd incorp.)

Semiconductor Device, Diode, Silicon, Transient Voltage Suppressor, Type 1N5610 through 1N5613, JAN, JANTX, JANTXV, and JANS
半导体器件二极管硅瞬态电压抑制器 1N5610至1N5613型 JAN JANTX JANTSV和JANS

MIL MIL-PRF-19500/434E Amendment 1(amendment incorporated)

Semiconductor Device, Diode, Silicon, Transient Voltage Suppressor, Type 1N5610 through 1N5613, JAN, JANTX, JANTXV, and JANS
半导体器件二极管硅瞬态电压抑制器 1N5610至1N5613型 JAN JANTX JANTSV和JANS

《国家标准化发展纲要》提出建设国家数字标准馆，推动标准化工作向数字化、网络化、智能化转型。中国标准化研究院正在全力推进国家数字标准馆建设，力争在2026年底建成“一个中心”和“一个平台”，即全球领先的标准数据资源中心，涵盖标准全生命周期的数字化、网络化、智能化研究与服务平台。

专题数据库

标准管理系统

大数据分析系统

标准智能研制系统