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现行 SJ 20068-1992
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半导体分立器件 2DW14~18型低噪声硅电压基准二极管详细规范 Semiconductor discrete device--Detail specification for lower noise for silicon voltage reference diode for Type 2DW14~18
发布日期: 1992-11-19
实施日期: 1993-05-01
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现行
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半导体分立器件 3DG251型硅超高频低噪声晶体管 详细规范
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现行
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半导体分立器件CS203型砷化镓微波低噪声场效应晶体管详细规范
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Semiconductor discrete devices Detail specification for type 3DG144 NPN silicon high-frequency Low-noise Low-power transistor
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半导体分立器件3DG143型NPN硅高频低噪声小功率晶体管详细规范
Semiconductor discrete devices Detail specification for type 3DG143 NPN silicon high-frequency Low-noise Low-power transistor
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半导体分立器件 3DG213型NPN硅超高频低噪声双差分对晶体管详细规范
Semiconductor discrete device--Detail specification for silicon NPN ultra-high frequency low-noise dual-difference match transistor of Type 3DG213
1992-11-19