本文件规定了一种测试方法（本文称为“瞬态双界面测量”），用于确定热流通过单一路径的半导体器件的“结-壳”导电热阻R0JC（0JC），即:。，半导体器件，具有从被加热的管芯表面到封装外壳表面的高传导性热流路径，封装外壳表面可通过与外部散热器接触来冷却。

This document specifies a test method (referred to herein as "Transient Dual Interface Measurement") to determine the conductive thermal resistance "Junction-to-Case" R0JC (0JC) of semiconductor devices with a heat flow through a single path, i.e., semiconductor devices with a high conductive heat flow path from the die surface that is heated to a package case surface that can be cooled by contacting it to an external heat sink.