Semiconductor Device, Diode, Silicon, Transient Voltage Suppressor Types 1N6461 through 1N6468, 1N6461US through 1N6468US, and 1N6461URS through 1N6468URS, JAN, JANTX, and JANTXV
半导体器件、二极管、硅、瞬态电压抑制器1N6461至1N6468、1N6461US至1N6468US和1N6461URS至1N6466URS、JAN、JANTX和JANTXV型
This specification covers the performance requirements for 500-watt peak pulse, power, silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.