1.1 本指南涵盖了俄歇电子能谱中用于深度剖面的程序。 1.2 深度分析指南如下: 部分 离子溅射 6 角度研磨和横截面 7 机械成坑 8 网格复制方法 9 无损深度剖面 10 1.3 以SI单位表示的值将被视为标准值。本标准不包括其他计量单位。 1.4 本标准并不旨在解决与其使用相关的所有安全性问题（如果有）。本标准的使用者有责任在使用前建立适当的安全、健康和环境实践并确定法规限制的适用性。 1.5 本国际标准是根据世界贸易组织发布的关于制定国际标准、指南和建议的原则的决定中确立的国际公认的标准化原则制定的技术性贸易壁垒委员会。 ======意义和用途====== 5.1 俄歇电子能谱产生关于近表面区域中固体表面的化学和物理状态的信息。无损深度剖面仅限于该近地表区域。中给出了测量凹坑深度和薄膜厚度的技术 ( 1 ) . 5 5.2 离子溅射主要用于小于1 μ m量级的深度。 5.3 角度研磨或机械凹坑主要用于大于1 μ m数量级的深度。 5.4 用于研究界面的深度轮廓方法的选择取决于表面粗糙度、界面粗糙度和膜厚度 ( 2 ) . 5.5 深度剖面界面宽度可以使用在实践中描述的逻辑函数来测量 E1636 .

1.1 This guide covers procedures used for depth profiling in Auger electron spectroscopy. 1.2 Guidelines are given for depth profiling by the following: Section Ion Sputtering 6 Angle Lapping and Cross-Sectioning 7 Mechanical Cratering 8 Mesh Replica Method 9 Nondestructive Depth Profiling 10 1.3 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard. 1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use. 1.5 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee. ====== Significance And Use ====== 5.1 Auger electron spectroscopy yields information concerning the chemical and physical state of a solid surface in the near surface region. Nondestructive depth profiling is limited to this near surface region. Techniques for measuring the crater depths and film thicknesses are given in ( 1 ) . 5 5.2 Ion sputtering is primarily used for depths of less than the order of 1 μm. 5.3 Angle lapping or mechanical cratering is primarily used for depths greater than the order of 1 μm. 5.4 The choice of depth profiling methods for investigating an interface depends on surface roughness, interface roughness, and film thickness ( 2 ) . 5.5 The depth profile interface widths can be measured using a logistic function which is described in Practice E1636 .