1.1 本规程涵盖了根据等效单能中子注量表征源中子注量的程序。它适用于中子效应测试、测试规范的制定和中子测试环境的表征。这些中子源可能具有广泛的中子能量范围，或者可能是能量高达20 MeV的单能中子源。这种做法不适用于位移损伤的主要来源是能量小于10 keV的中子的情况。相关等效性是指对入射源光谱的材料的某些物理特性的特定影响。为了实现这一点，需要了解中子作为能量函数对相关材料特定特性的影响。中子能量效应的急剧变化可能会限制这种做法在单能源情况下的实用性。 1.2 本实践以一种普遍适用于各种材料和来源的方式提出。位移之间的相关性 ( 1- 3. ) 2. 由不同粒子（电子、中子、质子和重离子）引起的故障不在本规程的范围内，但在实践中得到了解决 E3084 . 在电子半导体器件的辐射硬度测试中，感兴趣的特定材料包括硅和砷化镓，中子源通常是测试和研究反应堆以及加利福尼亚-252辐射器。 1.3 所涉及的技术取决于以下因素: (1) 中子源注量谱的详细测定，以及 (2) 中子的降解（损伤）效应作为能量对特定材料特性的函数的知识。 1.4 中子注量谱的详细测定参见 1.3 如果暴露条件是可重复的，则无需对每次试验暴露重新进行。 当不重复光谱测定时，应为每次试验暴露使用中子注量监测器。 1.5 以国际单位制表示的数值应视为标准值。除MeV、keV、eV、MeV·mbarn、rad（Si）·cm外，本标准不包括其他测量单位 2. ，和rad（GaAs）·cm 2. . 1.6 本标准并非旨在解决与其使用相关的所有安全问题（如有）。本标准的用户有责任在使用前制定适当的安全、健康和环境实践，并确定监管限制的适用性。 1.7 本国际标准是根据世界贸易组织技术性贸易壁垒（TBT）委员会发布的《关于制定国际标准、指南和建议的原则的决定》中确立的国际公认标准化原则制定的。 ====意义和用途====== 5.1 这种做法对于表征中子辐照电子设备的辐射硬度很重要。这种表征使预测辐照半导体器件或电子系统的操作特性的某些变化成为可能。为了便于解释和评估不同注量谱源的辐照结果的一致性，可以方便地将源的入射中子注量减少到单个参数，即适用于特定半导体材料的等效单能中子注量。 5.2 为了确定等效单能中子注量，有必要评估特定半导体材料的位移损伤。理想情况下，该数量与正在测试的半导体器件或系统的特定功能性能参数（例如电流增益）的退化相关。然而，尚未明确确定所有设备类型和性能参数的这种相关性，因为在许多情况下，其他影响也可能很重要。 由入射中子注量或混合中子注量中的γ射线、短期和长期退火以及其他因素产生的电离效应可能会导致观察到的性能退化（损坏）。因此，在计算位移损伤和给定电子设备的性能退化之间的相关性时应谨慎。附录中讨论了这种相关性适用的装置类型以及位移损伤的数值评估。 5.3 1-MeV当量注量的概念在辐射硬度测试界广泛使用。它的优点和缺点已经被广泛讨论 ( 9- 12 ) . 由于这些原因，附件中介绍了1-MeV当量注量的标准应用细节。

1.1 This practice covers procedures for characterizing neutron fluence from a source in terms of an equivalent monoenergetic neutron fluence. It is applicable to neutron effects testing, to the development of test specifications, and to the characterization of neutron test environments. The sources may have a broad neutron-energy range, or may be mono-energetic neutron sources with energies up to 20 MeV. This practice is not applicable in cases where the predominant source of displacement damage is from neutrons of energy less than 10 keV. The relevant equivalence is in terms of a specified effect on certain physical properties of materials upon which the source spectrum is incident. In order to achieve this, knowledge of the effects of neutrons as a function of energy on the specific property of the material of interest is required. Sharp variations in the effects with neutron energy may limit the usefulness of this practice in the case of mono-energetic sources. 1.2 This practice is presented in a manner to be of general application to a variety of materials and sources. Correlation between displacements ( 1- 3 ) 2 caused by different particles (electrons, neutrons, protons, and heavy ions) is out of the scope of this practice but is addressed in Practice E3084 . In radiation-hardness testing of electronic semiconductor devices, specific materials of interest include silicon and gallium arsenide, and the neutron sources generally are test and research reactors and californium-252 irradiators. 1.3 The technique involved relies on the following factors: (1) a detailed determination of the fluence spectrum of the neutron source, and (2) a knowledge of the degradation (damage) effects of neutrons as a function of energy on specific material properties. 1.4 The detailed determination of the neutron fluence spectrum referred to in 1.3 need not be performed afresh for each test exposure, provided the exposure conditions are repeatable. When the spectrum determination is not repeated, a neutron fluence monitor shall be used for each test exposure. 1.5 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard, except for MeV, keV, eV, MeV·mbarn, rad(Si)·cm 2 , and rad(GaAs)·cm 2 . 1.6 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use. 1.7 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee. ====== Significance And Use ====== 5.1 This practice is important in characterizing the radiation hardness of electronic devices irradiated by neutrons. This characterization makes it feasible to predict some changes in operational properties of irradiated semiconductor devices or electronic systems. To facilitate uniformity of the interpretation and evaluation of results of irradiations by sources of different fluence spectra, it is convenient to reduce the incident neutron fluence from a source to a single parameter—an equivalent monoenergetic neutron fluence—applicable to a particular semiconductor material. 5.2 In order to determine an equivalent monoenergetic neutron fluence, it is necessary to evaluate the displacement damage of the particular semiconductor material. Ideally, this quantity is correlated to the degradation of a specific functional performance parameter (such as current gain) of the semiconductor device or system being tested. However, this correlation has not been established unequivocally for all device types and performance parameters since, in many instances, other effects also can be important. Ionization effects produced by the incident neutron fluence or by gamma rays in a mixed neutron fluence, short-term and long-term annealing, and other factors can contribute to observed performance degradation (damage). Thus, caution should be exercised in making a correlation between calculated displacement damage and performance degradation of a given electronic device. The types of devices for which this correlation is applicable, and numerical evaluation of displacement damage are discussed in the annexes. 5.3 The concept of 1-MeV equivalent fluence is widely used in the radiation-hardness testing community. It has merits and disadvantages that have been debated widely ( 9- 12 ) . For these reasons, specifics of a standard application of the 1-MeV equivalent fluence are presented in the annexes.