MIL MIL-PRF-19500/639A Notice 3-Validation-半导体器件场效应辐射硬化（总剂量和单事件效应）晶体管 P沟道硅2N7411型JANSD和JANSR-国家数字标准馆

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Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects)Transistor, P-Channel Silicon Type 2N7411 JANSD and JANSR 半导体器件场效应辐射硬化（总剂量和单事件效应）晶体管 P沟道硅2N7411型JANSD和JANSR

发布日期： 2016-05-24

本规范涵盖了P沟道、增强模式、MOSFET、辐射硬化（总剂量和单事件特性见图4）、功率晶体管的性能要求。按照MIL-PRF-19500的规定，为每种设备类型提供一级产品保证。

This specification covers the performance requirements for a P-Channel, enhancement-mode, MOSFET, radiation hardened (Total Dose and Single Event characterization-see figure 4), power transistor. One level of product assurance is provided for each device type as specified in MIL-PRF-19500.

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发布单位或类别：美国-美国军事规范和标准

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