Testing of materials for semiconductor technology; determination of the dopant concentration profile of single crystalline semiconductor material by means of the capacitancevoltage method and mercury contact
半导体技术材料测试；用电容电压法和汞接触法测定单晶半导体材料的掺杂浓度分布

1982-10-01

Testing of materials for semiconductor technology; determination of impurty content in silicon by infrared absorption; carbon
半导体技术材料测试；红外吸收法测定硅中杂质含量；碳

1982-08-01

Testing of materials for semiconductor technology - Determination of impurity content in semiconductors by infrared absorption - Part 1: Carbon in gallium arsenide
半导体技术材料的试验.用红外吸收法测定半导体中的杂质含量.第1部分:砷化镓中的碳

1997-07-01

Testing of materials for semiconductor technology; determination of the orientation of single crystals by means of Laue back scattering
半导体技术材料测试；用劳厄背散射法测定单晶的取向

1982-04-01

Testing of materials for semiconductor technology - Determination of traces of elements in liquids - Part 7: Determination of 31 elements in high-purity hydrochloric acid by ICP-MS
半导体技术用材料的试验.液体中微量元素的测定.第7部分:用ICP-MS测定高纯度盐酸中的31种元素

2018-04-01

Testing of materials for semiconductor technology; determination of impurities in carrier gases and dopant gases; determination of C<(Index)1>-C<(Index)3>-hydrocarbons in nitrogen by gas-chromatography
半导体技术材料测试；载气和掺杂气体中杂质的测定；用气相色谱法测定氮中的C<（指数）1>-C<（指数）3>-碳氢化合物

1993-09-01

Draft Document - Testing of materials for semiconductor technology - Determination of traces of elements in liquids - Part 8: Determination of 33 elements in high-purity sulfuric acid by ICP-MS
文件草案.半导体技术材料的试验.液体中微量元素的测定.第8部分:用ICP-MS测定高纯度硫酸中的33种元素

2022-01-01

Testing of materials for semiconductor technology; determination of impurities in carrier gases and doping gases; determination of water impurity in hydrogen, oxygen, nitrogen, argon and helium by using a diphosphorus pentoxide cell
半导体技术材料测试；载气和掺杂气体中杂质的测定；用二磷五氧化二磷电池测定氢、氧、氮、氩和氦中的水杂质

1987-08-01

Testing of materials for semiconductor technology - Determination of trace elements in liquids - Part 5: Guideline for the selection of materials and testing of their suitability for apparatus for sampling and sample preparation for the determination of trace elements in the range of micrograms per kilogram and nanograms per kilogram
半导体技术用材料的检验.液体中微量元素的测定.第5部分:取样和样品制备装置用材料选择和适用性试验指南

2010-03-01

Testing of materials for semiconductor technology - Surface analysis of silicon wafers by multielement determination in aqueous analysis solutions using mass spectrometry with inductively coupled plasma (ICP-MS)
半导体技术材料的检验.用电感耦合等离子体质谱法（ICP-MS）在水分析溶液中通过多元素测定对硅片进行表面分析

2013-10-01

Testing of materials for semiconductor technology; determination of impurities in carrier gases and doping gases; determination of methane impurity in H<(Index)2>, O<(Index)2>, N<(Index)2>, Ar and He by using a flame ionization detector (FID)
半导体技术材料测试；载气和掺杂气体中杂质的测定；用火焰离子化检测器（FID）测定H<（指数）2>、O<（指数）2>、N<（指数）2>、Ar和He中的甲烷杂质

1991-03-01

Testing of materials for semiconductor technology - Determination of trace elements in liquids - Part 1: Silver (Ag), gold (Au), calcium (Ca), copper (Cu), iron (Fe), potassium (K) and sodium (Na) in nitric acid by AAS
半导体技术材料试验液体中微量元素的测定第1部分:原子吸收光谱法测定硝酸中的银、金、钙、铜、铁、钾和钠

2003-04-01

Testing of materials for semiconductor technology - Determination of traces of elements in liquids - Part 6: Determination of 36 elements in a high-purity ammonium fluoride solution (NH<(Index)4>F) and in etching mixtures of high-purity ammonium fluoride solution containing hydrofluoric acid
半导体技术材料试验.液体中微量元素的测定.第6部分:高纯度氟化铵溶液（NH<（指数）4>F）和含氢氟酸的高纯度氟化铵溶液蚀刻混合物中36种元素的测定

2014-11-01

Testing of materials for semiconductor technology - Determination of trace elements in liquids - Part 2: Calcium (Ca), cobalt (Co), chromium (Cr), copper (Cu), Iron (Fe), nickel (Ni) and zinc (Zn) in hydrofluoric acid with plasma-induced emission spectroscopy
半导体技术材料试验.液体中微量元素的测定.第2部分:用等离子体诱导发射光谱法测定氢氟酸中的钙（Ca）、钴（Co）、铬（Cr）、铜（Cu）、铁（Fe）、镍（Ni）和锌（Zn）

2003-04-01