Specification for harmonized system of quality assessment for electronic components. Blank detail specification: case-rated bipolar transistors for low frequency amplification
电子元件质量评定协调体系规范 空白详细规范:低频放大用外壳额定双极晶体管

1976-08-15

管壳额定开关用场效应晶体管 空白详细规范
Blank detail-specification for field-effect transistors for case-rated switching application

1995-01-05

Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Case-rated bipolar transistors for low-frequency amplification
电子元件质量评定协调体系规范 半导体分立器件 空白详细规范 用于低频放大的外壳额定双极晶体管

1990-02-15

반도체 소자－개별 소자－제7부：바이폴러 트랜지스터－제2절：저주파 증폭용 케이스 정격 바이폴러 트랜지스터의 개별 규격 지침
半导体器件分立器件第7部分:双极晶体管第2节:低频放大用外壳额定双极晶体管空白详细规范

2006-12-11

Specification for harmonized system of quality assessment for electronic components. Blank detail specification: case-rated bipolar transistors for high frequency amplification
电子元件质量评定协调体系规范 空白详细规范:高频放大用外壳额定双极晶体管

1976-09-15

3DD313型硅NPN低频放大管壳额定的双极型晶体管
Detail specification for electronic components--Silicon NPN case rated bipolar transistor for low-frequency amplification for Type 3DD313

1991-04-08

3CD507型硅PNP低频放大管壳额定的双极型晶体管
Detail specification for electronic components--Silicon PNP case rated bipolar transistor for low-frequency amplification for Type 3CD507

1991-04-08

Specification for harmonized system of quality assessment for electronic components. Blank detail specification: ambient-rated bipolar transistors for low and high frequency amplification
电子元件质量评定协调体系规范 空白详细规范:用于低频和高频放大的环境额定双极晶体管

1976-08-15

Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Case-rated bipolar transistors for high-frequency amplifications
电子元件质量评定协调体系规范 半导体分立器件 空白详细规范 用于高频放大的外壳额定双极晶体管

1991-11-15

반도체 소자－개별 소자－제7부：바이폴러 트랜지스터－제4절：고주파 증폭용 케이스 정격 바이폴러 트랜지스터의 개별 규격 지침
半导体器件分立器件第7部分:双极晶体管第4节:高频放大用外壳额定双极晶体管空白详细规范

2006-12-11

Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Ambient-rated bipolar transistors for low and high-frequency amplification
电子元件质量评定协调体系规范 半导体分立器件 空白详细规范 用于低频和高频放大的环境额定双极晶体管

1990-02-15

3DA2688型晶体管详细规范
Detail specification for electronic components--Silicon NPN case rated bipolar transistor for high-frequency amplification for type 3DA2688

1991-04-08

3DA1162型晶体管详细规范
Detail specification for electronic components--Silicon NPN case-rated bipolar transistor for high-frequency amplification,Type 3DA1162

1991-04-08

반도체 소자－개별 소자－제7부：바이폴러 트랜지스터－제1절：고주파,저주파 증폭용 주위 정격 바이폴러 트랜지스터의 개별 규격 지침
半导体器件分立器件第7部分:双极晶体管第一节:低频和高频放大用环境额定双极晶体管空白详细规范

2006-12-11

半导体器件 分立器件 第7部分:双极型晶体管 第四篇 高频放大管壳额定双极型晶体管空白详细规范
Semiconductor devices--Discrete devices--Part 7:Bipolar transistors--Section Four:Blank detail specification for case-rated bipolartransistors for high-frequency amplification

1998-11-17

Harmonized system of quality assessment for electronic components. Semiconductor devices. Discrete devices. Field-effect transistors. Blank detail specification for case-rated field-effect transistors for switching applications
电子元件质量评定协调体系 半导体器件 离散设备 场效应晶体管 开关用外壳额定场效应晶体管空白详细规范

1996-12-15

Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Field-effect transistors for case-rated power amplifier applications
电子元件质量评定协调体系规范 半导体分立器件 空白详细规范 用于外壳额定功率放大器应用的场效应晶体管

1993-07-15