该噪声测量方法适用于噪声具有高斯功率分布的晶体管、噪声具有平坦（白色）功率分布的晶体管，以及噪声具有l/f（功率与频率成反比）功率分布的晶体管。以前称为RS-353和/或EIA-353。

This noise measurement method applies to transistors whose noise has a Gaussian power distribution, to transistors whose noise has a flat (white) power distribution, and to transistors whose noise has a l/f (power inversely proportional to frequency) power distribution. Formerly known as RS-353 and/or EIA-353.