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现行 EN 15991:2015
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Testing of ceramic and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by inductively coupled plasma optical emission spectrometry (ICP OES) with electrothermal vaporisation (ETV) 陶瓷和基础材料的测试 - 通过电感耦合等离子体发射光谱法(ICP OES)与电热蒸发(ETV)直接测定碳化硅粉末和颗粒中杂质的质量分数
发布日期: 2015-11-25
实施日期: 2015-11-25
该欧洲标准定义了粉末和颗粒状碳化硅中Al,Ca,Cr,Cu,Fe,Mg,Ni,Ti,V和Zr的痕量元素浓度的测定方法。 根据元素,波长,等离子体条件和重量,该测试方法适用于从0.1mg/kg至约1000mg/kg的上述痕量污染物的质量含量,评估后也为0.001mg/kg至约5 000 mg/kg。 注1:一般来说,使用电感耦合等离子体(ICP OES)和电热蒸发(ETV)的光发射光谱法,线性工作范围可达四个数量级。通过重量的变化或通过选择具有不同灵敏度的线,可以对各个元件扩展该范围。 经过充分验证,该标准也适用于其他金属元素(Rb和Cs除外)和一些非金属污染物(如P和S)和其他非金属粉末或颗粒物质,如碳化物,氮化物,石墨,烟灰,焦炭,煤炭等一些氧化物质(见[1],[4],[5],[6],[7],[8],[9]和[10])。 注2:对石墨,B4C,Si3N4,BN和几种金属氧化物等材料有积极的经验,以及在某些材料中测定P和S
This European Standard defines a method for the determination of the trace element concentrations of Al, Ca, Cr, Cu, Fe, Mg, Ni, Ti, V and Zr in powdered and granular silicon carbide. Dependent on element, wavelength, plasma conditions and weight, this test method is applicable for mass contents of the above trace contaminations from about 0,1 mg/kg to about 1 000 mg/kg, after evaluation also from 0,001 mg/kg to about 5 000 mg/kg. NOTE 1 Generally for optical emission spectrometry using inductively coupled plasma (ICP OES) and electrothermal vaporization (ETV) there is a linear working range of up to four orders of magnitude. This range can be expanded for the respective elements by variation of the weight or by choosing lines with different sensitivity. After adequate verification, the standard is also applicable to further metallic elements (excepting Rb and Cs) and some non-metallic contaminations (like P and S) and other allied non-metallic powdered or granular materials like carbides, nitrides, graphite, soot, coke, coal, and some other oxidic materials (see [1], [4], [5], [6], [7], [8], [9] and [10]). NOTE 2 There is positive experience with materials like, for example, graphite, B4C, Si3N4, BN and several metal oxides as well as with the determination of P and S in some of these materials.
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归口单位: CEN/TC 187-
相似标准/计划/法规
现行
DIN 51096
Testing of ceramic raw and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by inductively coupled plasma optical emission spectrometry (ICP OES) and electrothermal vaporisation (ETV)
陶瓷原材料和基础材料的试验.用电感耦合等离子体发射光谱法(ICP OES)和电热蒸发法(ETV)直接测定碳化硅粉末和颗粒中杂质的质量分数
2008-07-01
现行
DIN 51096-DRAFT
Draft Document - Testing of ceramic raw and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by inductively coupled plasma optical emission spectrometry (ICP OES) and electrothermal vaporisation (ETV)
文件草案.陶瓷原材料和基础材料的试验.用电感耦合等离子体发射光谱法(ICP OES)和电热蒸发法(ETV)直接测定碳化硅粉末和颗粒中杂质的质量分数
2007-09-01
现行
BS EN 15991-2015
Testing of ceramic and basic materials. Direct determination of mass fractions of impurities in powders and granules of silicon carbide by inductively coupled plasma optical emission spectrometry (ICP OES) with electrothermal vaporisation (ETV)
陶瓷和基本材料的测试 电热蒸发电感耦合等离子体发射光谱法直接测定碳化硅粉末和颗粒中杂质的质量分数
2015-11-30
现行
DIN 51457
Testing of ceramic raw and basic materials - Direct determination of mass fractions of trace impurities in powders, granules and lumps of graphite by optical emission spectroscopy by inductively coupled plasma (ICP OES) and by electrothermal vaporization (ETV) under the action of a halogenated reaction gas (modifiers)
陶瓷原材料和基础材料的试验.在卤化反应的作用下 通过电感耦合等离子体(ICP OES)和电热蒸发(ETV)的光发射光谱法直接测定石墨粉末、颗粒和块状物中痕量杂质的质量分数
2017-05-01