1.1 本指南涵盖了用于俄歇电子光谱学中深度剖面的程序。 1.2 深度剖面的指导原则如下: 部分 离子溅射 6. 角度研磨和横截面 7. 机械缩孔 8. 网格复制方法 9 无损深度剖面 10 1.3 以国际单位制表示的数值应视为标准值。本标准不包括其他计量单位。 1.4 本标准并非旨在解决与其使用相关的所有安全问题（如有）。本标准的用户有责任在使用前制定适当的安全和健康实践，并确定监管限制的适用性。 ====意义和用途====== 5.1 俄歇电子能谱产生了有关近表面区域固体表面化学和物理状态的信息。 无损深度剖面仅限于该近表面区域。文中给出了测量弹坑深度和膜厚度的技术 ( 1. ) . 5. 5.2 离子溅射主要用于深度小于1μm的情况。 5.3 角度研磨或机械成坑主要用于深度大于1μm的情况。 5.4 用于研究界面的深度剖面方法的选择取决于表面粗糙度、界面粗糙度和膜厚度 ( 2. ) . 5.5 深度剖面界面宽度可以使用实践中描述的逻辑函数测量 E1636 .

1.1 This guide covers procedures used for depth profiling in Auger electron spectroscopy. 1.2 Guidelines are given for depth profiling by the following: Section Ion Sputtering 6 Angle Lapping and Cross-Sectioning 7 Mechanical Cratering 8 Mesh Replica Method 9 Nondestructive Depth Profiling 10 1.3 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard. 1.4 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. ====== Significance And Use ====== 5.1 Auger electron spectroscopy yields information concerning the chemical and physical state of a solid surface in the near surface region. Nondestructive depth profiling is limited to this near surface region. Techniques for measuring the crater depths and film thicknesses are given in ( 1 ) . 5 5.2 Ion sputtering is primarily used for depths of less than the order of 1 μm. 5.3 Angle lapping or mechanical cratering is primarily used for depths greater than the order of 1 μm. 5.4 The choice of depth profiling methods for investigating an interface depends on surface roughness, interface roughness, and film thickness ( 2 ) . 5.5 The depth profile interface widths can be measured using a logistic function which is described in Practice E1636 .