1.1 本试验方法涵盖稳态初级光电流的测量， 我 pp页 ，在半导体器件暴露于电离辐射时产生。这些程序旨在测量大于10的光电流 −9 A·s/Gy（Si或Ge），在被测量装置的松弛时间小于25的情况下 % 电离源的脉冲宽度。这些程序对电离剂量率的有效性高达10 8. Gy（Si或Ge）/s已建立。该程序可用于测量高达10%的剂量率 10 Gy（Si或Ge）/s；然而，必须格外小心。10以上 8. 对于任何设备，包响应可能主导设备响应。 当测量10的光电流时，还需要额外的预防措施 −9 A·s/Gy（Si或Ge）或更低。 1.2 本测试方法还包括设置、校准和测试电路评估程序。 1.3 由于设备类型和不同应用要求之间的可变性，本试验方法中未给出进行任何特定试验的剂量率范围，但必须单独规定。 1.4 以国际单位制表示的数值应视为标准值。本标准不包括其他计量单位。 1.5 本标准并非旨在解决与其使用相关的所有安全问题（如有）。本标准的用户有责任在使用前制定适当的安全、健康和环境实践，并确定监管限制的适用性。 1.6 本国际标准是根据世界贸易组织技术性贸易壁垒（TBT）委员会发布的《关于制定国际标准、指南和建议的原则的决定》中确立的国际公认标准化原则制定的。 ====意义和用途====== 5.1 PN结二极管- 简单光场的稳态光电流 p-n 结二极管是一个可直接测量的量，在很大的电离辐射范围内与器件响应直接相关。对于更复杂的器件，结光电流可能与器件响应没有直接关系。 5.2 齐纳二极管- 在这种器件中，光电流对齐纳电压的影响而不是光电流本身通常是最重要的。 该器件在齐纳区偏置时进行了最合适的测试。在测试齐纳二极管或精密电压调节器时，必须采取额外的预防措施，以确保辐照期间设备中产生的光电流不会导致设备上的电压在测试期间发生变化。 5.3 双极晶体管- 由于器件几何形状要求来自基极集电极结的光电流远大于来自基极发射极结的电流，因此通常仅在发射极开路的集电极-基极结上进行测量；然而，有时为了获得用于计算机辅助电路分析的数据，还需要测量发射极-基极结光电流。 5.4 结场效应器件- 正确的光电流测量要求在测量栅极通道光电流期间，源极对漏极短路（直流）。在四极管连接设备中，应分别监测两个栅极-通道结。 5.5 绝缘栅场效应装置- 在这种类型的器件中，真实的光电流在衬底和沟道、源区和漏区之间。可以通过此处使用的技术测量可产生开启器件的电压的电流，但它是由于栅极绝缘体中的感应电导率引起的，因此不是结光电流。

1.1 This test method covers the measurement of steady-state primary photocurrent, I pp , generated in semiconductor devices when these devices are exposed to ionizing radiation. These procedures are intended for the measurement of photocurrents greater than 10 −9 A·s/Gy(Si or Ge), in cases for which the relaxation time of the device being measured is less than 25 % of the pulse width of the ionizing source. The validity of these procedures for ionizing dose rates as great as 10 8 Gy(Si or Ge)/s has been established. The procedures may be used for measurements at dose rates as great as 10 10 Gy(Si or Ge)/s; however, extra care must be taken. Above 10 8 Gy/s, the package response may dominate the device response for any device. Additional precautions are also required when measuring photocurrents of 10 −9 A·s/Gy(Si or Ge) or lower. 1.2 Setup, calibration, and test circuit evaluation procedures are also included in this test method. 1.3 Because of the variability between device types and in the requirements of different applications, the dose rate range over which any specific test is to be conducted is not given in this test method but must be specified separately. 1.4 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard. 1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use. 1.6 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee. ====== Significance And Use ====== 5.1 PN Junction Diode— The steady-state photocurrent of a simple p-n junction diode is a directly measurable quantity that can be directly related to device response over a wide range of ionizing radiation. For more complex devices the junction photocurrent may not be directly related to device response. 5.2 Zener Diode— In this device, the effect of the photocurrent on the Zener voltage rather than the photocurrent itself is usually most important. The device is most appropriately tested while biased in the Zener region. In testing Zener diodes or precision voltage regulators, extra precaution must be taken to make certain the photocurrent generated in the device during irradiations does not cause the voltage across the device to change during the test. 5.3 Bipolar Transistor— As device geometries dictate that photocurrent from the base-collector junction be much greater than current from the base-emitter junction, measurements are usually made only on the collector-base junction with emitter open; however, sometimes, to obtain data for computer-aided circuit analysis, the emitter-base junction photocurrent is also measured. 5.4 Junction Field-Effect Device— A proper photocurrent measurement requires that the source be shorted (dc) to the drain during measurement of the gate-channel photocurrent. In tetrode-connected devices, the two gate-channel junctions should be monitored separately. 5.5 Insulated Gate Field-Effect Device— In this type of device, the true photocurrent is between the substrate and the channel, source, and drain regions. A current which can generate voltage that will turn on the device may be measured by the technique used here, but it is due to induced conductivity in the gate insulator and thus is not a junction photocurrent.