SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N4565A-1 THROUGH 1N4584A-1, AND 1N4565AUR-1 THROUGH 1N4584AUR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC, RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANT
半导体器件 二极管 硅 低电平电压参考 温度补偿 类型1N4565A-1到1N4584A-1 和1N4565AUR-1到1n4564ur-1 JAN JANTX JANTXV JANS JANHC和JANKC 辐射硬化(仅总剂量)类型JANT
发布日期:
2019-01-29
MIL MIL-PRF-19500/452K涵盖了6.4伏±5%硅、低偏置电流、温度补偿、电压参考二极管的性能要求。按照MIL-PRF-19500的规定,每种封装器件类型都有四级产品保证,每种未封装器件类型的芯片有两级产品保证。按照MIL-PRF-19500的规定,为每种封装器件类型提供七个级别的辐射硬化(仅限总剂量)产品保证,并为每种未封装器件类型的模具提供两个级别的产品保证。
MIL MIL-PRF-19500/452K covers the performance requirements for 6.4 volts ±5 percent, silicon, low bias current, temperature compensated, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die. Seven levels of radiation hardened (total dose only) product assurance are provided for each encapsulated device type, and two levels of product assurance for each unencapsulated device type die as specified in MIL-PRF-19500.