IEC 62899-503-3:20 21(E)规定了通过转移长度法(TLM)测量印刷薄膜晶体管(TFT)的接触电阻的方法。该方法需要制造在源极和漏电极之间具有变化的沟道长度(L)的测试元件组(TEG)。该方法旨在用于TFT电极接触的质量评估，并且适合于确定接触电阻是否位于期望的范围内。

IEC 62899-503-3:2021(E) specifies a measuring method of contact resistance for printed thin film transistors (TFTs) by the transfer length method (TLM). The method requires the fabrication of a test element group (TEG) with varying channel length (L) between source and drain electrodes. The method is intended for quality assessment of TFT electrode contacts and is suited for determining whether the contact resistance lies within a desired range.