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现行 MIL MIL-PRF-19500/420L Amendment 1(amendment incorporated)
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Semiconductor Device, Diode, Silicon, Power, Rectifier, Encapsulated (through-Hole and Surface Mount Packages), Types 1N5550 through 1N5554, JAN, JANTX, JANTXV, JANS, JANHC and JANKC 半导体器件 二极管 硅 功率 整流器 封装(通孔和表面安装封装) 1N5550至1N5554型 JAN JANTX JANTXV JANS JANHC和JANKC
发布日期: 2010-02-10
本规范涵盖了硅、通用半导体二极管的性能要求。二极管为非腔双插头结构,硅芯片两侧和端子引脚之间具有高温冶金结合(1类)。为每个封装设备提供四个级别的产品保证(JAN、JANTX、JANTXV和JANS)。为每种未封装设备类型提供两级产品保证。
This specification covers the performance requirements for silicon, general purpose, semiconductor diodes. The diode is non cavity double plug construction, with high temperature metallurgical bonds (category 1) between both sides of the silicon die and terminal pins. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device. Two levels of product assurance are provided for each unencapsulated device type.
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发布单位或类别: 美国-美国军事规范和标准
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