MIL MIL-M-38510/757C Notice 1-Validation-微电路数字高级CMOS 缓冲门单片硅正逻辑-国家数字标准馆

现行 MIL MIL-M-38510/757C Notice 1-Validation

到馆提醒

收藏跟踪

购买正版

Microcircuits, Digital, Advanced CMOS, Buffer Gates, Monolithic Silicon, Positive Logic 微电路数字高级CMOS 缓冲门单片硅正逻辑

发布日期： 2009-04-02

本规范涵盖了单片硅、高级CMOS、逻辑微电路的详细要求。提供了两种产品保证等级和外壳轮廓、铅饰面和辐射硬度保证（RHA）的选择，并反映在完整的零件或识别号（PIN）中。对于该产品，MIL-M-38510的要求已被MIL-PRF-38535取代（见6.3）。

This specification covers the detail requirements for monolithic silicon, advanced CMOS, logic microcircuits. Two product assurance classes and a choice of case outlines, lead finishes, and radiation hardness assurance (RHA) are provided and are reflected in the complete Part or Identifying Number (PIN). For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535 (see 6.3).

分类信息

发布单位或类别：美国-美国军事规范和标准

关联关系

研制信息

相似标准/计划/法规

MIL MIL-M-38510/757C Notice 3-Validation 3

Microcircuits, Digital, Advanced CMOS, Buffer Gates, Monolithic Silicon, Positive Logic
微电路数字高级CMOS 缓冲门单片硅正逻辑

MIL MIL-M-38510/657A Notice 2-Validation 2

Microcircuits, Digital, High-Speed CMOS, Buffer Gates, Monolithic Silicon
微电路数字高速CMOS 缓冲门单片硅

MIL MIL-M-38510/657A Notice 1-Validation 1

Microcircuits, Digital, High-Speed CMOS, Buffer Gates, Monolithic Silicon
微电路数字高速CMOS 缓冲门单片硅

MIL MIL-M-38510/657A Notice 3-Validation 3

Microcircuits, Digital, High-Speed CMOS, Buffer Gates, Monolithic Silicon
微电路数字高速CMOS 缓冲门单片硅

MIL MIL-M-38510/657A

MICROCIRCUITS, DIGITAL, HIGH-SPEED CMOS, BUFFER GATES, MONOLITHIC SILICON
微电路、数字、高速CMOS、缓冲门、单片硅

MIL MIL-M-38510/751B Notice 1-Validation 1

Microcircuits, Digital, Advanced CMOS, NOR Gates, Monolithic Silicon
微电路数字高级CMOS NOR门单片硅

MIL MIL-M-38510/752C Notice 1-Validation

Microcircuits, Digital, Advanced CMOS, and Gates, or Gates, Monolithic Silicon, Positive Logic
微电路数字高级CMOS和门或门单片硅正逻辑

MIL MIL-M-38510/752C Notice 3-Validation 3

Microcircuits, Digital, Advanced CMOS, and Gates, or Gates, Monolithic Silicon, Positive Logic
微电路数字高级CMOS和门或门单片硅正逻辑

MIL DESC 5962-96868

MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, QUADRUPLE BUS BUFFER GATE WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
微电路数字先进的高速CMOS 三态输出的四总线缓冲门单片硅

MIL MIL-M-38510/757C

MICROCIRCUITS, DIGITAL, ADVANCED CMOS, BUFFER GATES, MONOLITHIC SILICON, POSITIVE LOGIC (SUPERSEDING MIL-M-38510/328B)
微电路、数字、高级CMOS、缓冲门、单片硅、正逻辑（取代MIL-M-38510/328B）

MIL DSCC V62/03648

MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS, MONOLITHIC SILICON
微电路数字先进的高速CMOS 三态输出的四总线缓冲门单片硅

MIL DESC 5962-96862

MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, QUADRUPLE BUS BUFFER GATE WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
微电路数字先进的高速CMOS 三态输出的四总线缓冲门单片硅

MIL MIL-M-38510/750B Notice 1-Validation

Microcircuits, Digital, Advanced CMOS, Nand Gates, Monolithic Silicon, Positive Logic
微电路数字高级CMOS Nand Gates 单片硅正逻辑

MIL MIL-M-38510/750B Notice 3-Validation 3

Microcircuits, Digital, Advanced CMOS, Nand Gates, Monolithic Silicon, Positive Logic
微电路数字高级CMOS Nand Gates 单片硅正逻辑

MIL MIL-M-38510/757 Amendment 1

MICROCIRCUITS, DIGITAL, ADVANCED, CMOS, BUFFER GATES, MONOLITHIC SILICON, POSITIVE LOGIC (S/S BY MIL-M-38510/757A)
微电路、数字、高级、CMOS、缓冲门、单片硅、正逻辑（S/S由MIL-M-38510/757A提供）

MIL DESC 5962-90889 Notice A-Revision

MICROCIRCUITS, DIGITAL, BIPOLAR, CMOS, QUADRUPLE BUS BUFFER GATE, TTL COMPATIBLE, MONOLITHIC SILICON
微型电路数字双极 CMOS 四总线缓冲门兼容TTL 单片硅

MIL DESC 5962-90889

MICROCIRCUITS, DIGITAL, BIPOLAR, CMOS, QUADRUPLE BUS BUFFER GATE, TTL COMPATIBLE, MONOLITHIC SILICON
微电路数字双极 CMOS 四总线缓冲门 TTL兼容单片硅

MIL DSCC V62/04615

MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUADRUPLE 2-INPUT POSITIVE AND GATE, MONOLITHIC SILICON
微电路数字先进的CMOS 四倍2输入正与门单片硅

MICROCIRCUITS, DIGITAL, ADVANCED LOW POWER SCHOTTKY TTL, INVERTER GATE, BUFFER OUTPUT MONOLITHIC SILICON
微电路数字先进的低功耗肖特基TTL 逆变门缓冲输出单片硅

MIL DESC 5962-96863 Notice A-Revision

MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, QUADRUPLE BUS BUFFER GATE WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
微电路数字先进的高速CMOS 具有三态输出的四总线缓冲门 TTL兼容输入单片硅

《国家标准化发展纲要》提出建设国家数字标准馆，推动标准化工作向数字化、网络化、智能化转型。中国标准化研究院正在全力推进国家数字标准馆建设，力争在2026年底建成“一个中心”和“一个平台”，即全球领先的标准数据资源中心，涵盖标准全生命周期的数字化、网络化、智能化研究与服务平台。

专题数据库

标准管理系统

大数据分析系统

标准智能研制系统