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现行 MIL MIL-PRF-19500/357P
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Transistor, PNP, Radiation Hardened, Silicon, Amplifier, Types 2N3634 through 2N3637, JAN, JANTX, JANTXV, JANS, JANHC and JANKC 晶体管 PNP 抗辐射 硅 放大器 型号2N3634至2N3637 JAN JANTX JANTXV JANS JANHC和JANKC
发布日期: 2020-08-27
MIL-PRF-19500/357P涵盖PNP、硅、抗辐射、低功率放大器和开关晶体管的性能要求。每个封装设备提供四个级别的产品保证(JAN、JANTX、JANTXV和JANS),未封装模具提供两个级别的产品保证(JANHC和JANKC)。
MIL-PRF-19500/357P covers the performance requirements for PNP, silicon, radiation hardened, low-power amplifier, and switching transistors. Four levels of product assurance are provided for each encapsulated device (JAN, JANTX, JANTXV, and JANS) and two levels of product assurance are provided for unencapsulated die (JANHC and JANKC).
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发布单位或类别: 美国-美国军事规范和标准
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研制信息
相似标准/计划/法规
现行
MIL MIL-PRF-19500/357M Amendment 1(amendment incorporated)
Transistor, PNP, Radiation Hardened, Silicon, Amplifier, Types 2N3634 through 2N3637, JAN, JANTX, JANTXV, JANS, JANHC and JANKC
晶体管 PNP 辐射硬化 硅 放大器 2N3634至2N3637型 JAN JANTX JANTSV JANS JANHC和JANKC
2013-11-02
现行
MIL MIL-PRF-19500/336N
Transistor, Dual, Unitized, PNP, Radiation Hardened, Silicon, Types 2N3810, and 2N3811, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
晶体管 双 单元化 PNP 抗辐射 硅 2N3810和2N3811型 JAN JANTX JANTXV JANS JANHC和JANKC
2016-10-04
现行
MIL MIL-PRF-19500/336N Amendment 1
Transistor, Dual, Unitized, PNP, Radiation Hardened, Silicon, Types 2N3810, and 2N3811, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
晶体管 双 单元化 PNP 辐射硬化 硅 2N3810和2N3811型 JAN JANTX JANTXV JANS JANHC和JANKC
2017-12-12
现行
MIL MIL-PRF-19500/336L Amendment 1(amendment incorporated)
Transistor, Dual, Unitized, PNP, Radiation Hardened, Silicon, Types 2N3810, and 2N3811, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
晶体管 双 单元化 PNP 辐射硬化 硅 2N3810和2N3811型 JAN JANTX JANTXV JANS JANHC和JANKC
2013-06-21
现行
MIL MIL-PRF-19500/336K Amendment 1(amendment incorporated)
Transistor, Dual, Unitized, PNP, Radiation Hardened, Silicon, Types 2N3810, and 2N3811, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
晶体管 双 单元化 PNP 辐射硬化 硅 2N3810和2N3811型 JAN JANTX JANTXV JANS JANHC和JANKC
2009-04-01
现行
MIL MIL-PRF-19500/336L Amendment 2(all prev amd incorp.)
Transistor, Dual, Unitized, PNP, Radiation Hardened, Silicon, Types 2N3810, and 2N3811, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
晶体管 双 单元化 PNP 辐射硬化 硅 2N3810和2N3811型 JAN JANTX JANTXV JANS JANHC和JANKC
2014-02-27
现行
MIL MIL-S-19500/357D Amendment 1
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, AMPLIFIER TYPES 2N3634 THROUGH 2N3637, 2N3634L THROUGH 2N3637L JANTX, JANTXV, AND JANS (SUPERSEDING MIL-S-19500/357C) (S/S BY MIL-PRF-19500/357E)
半导体器件 晶体管 PNP 硅 放大器类型2N3634到2N3637 2N3634L到2N3637L JANTX JANTXV和JANS(取代MIL-S-19500/357C)(S由MIL-PRF-19500/375e代替)
1995-05-15
现行
MIL MIL-PRF-19500/357F Amendment 1
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, AMPLIFIER TYPES 2N3634 THROUGH 2N3637, 2N3634L THROUGH 2N3637L JAN, JANTX, JANTXV, JANS, JANHC AND JANKC (SUPERSEDING MIL-PRF-19500/357E) (S/S BY MIL-PRF-19500/357G)
半导体器件 晶体管 PNP 硅 放大器类型2N3634到2N3637 2N3634L到2N3637L JAN JANTX JANTXV JANS JANHC和JANKC(取代MIL-PRF-19500/357E)
2001-03-30
现行
MIL MIL-PRF-19500/350M
Transistor, PNP, Silicon, Low Power Encapsulated (Through-Hole and Surface Mount Packages) and Un-Encapsulated (DIE), Radiation and Non-Radiation Hardened, Types 2N3867, 2N3868, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
晶体管 PNP 硅 低功率封装(通孔和表面安装封装)和非封装(芯片) 辐射和非辐射硬化 2N3867、2N3868、JAN、JANTX、JANTXV、JANS、JANHC和JANKC型
2015-08-31
现行
MIL MIL-PRF-19500/350M Amendment 1(amendment incorporated)
Transistor, PNP, Silicon, Low Power Encapsulated (Through-Hole and Surface Mount Packages) and Un-Encapsulated (DIE), Radiation and Non-Radiation Hardened, Types 2N3867, 2N3868, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
晶体管 PNP 硅 低功率封装(通孔和表面安装封装)和非封装(DIE) 辐射和非辐射硬化 2N3867、2N3868、JAN、JANTX、JANTSV、JANS、JANHC和JANKC型
2016-01-28