现行

MIL MIL-S-19500/442 Amendment 1

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HI FREQUENCY POWER TYPES 2N5071 AND TX2N5071 (NO S/S DOCUMENT)
半导体器件 晶体管 NPN 硅 高频电源类型2N5071和TX2N5071（无S/S文件）

1972-03-22

现行

MIL MIL-S-19500/442 Notice 2-Cancellation

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HI FREQUENCY POWER TYPES 2N5071 AND TX2N5071 (NO S/S DOCUMENT)
半导体器件 晶体管 NPN 硅 高频功率类型2N5071和TX2N5071（无文件）

1999-06-07

现行

MIL MIL-S-19500/442 Notice 1-Validation

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HI FREQUENCY POWER TYPES 2N5071 AND TX2N5071 (NO S/S DOCUMENT)
半导体器件 晶体管 NPN 硅 高频电源类型2N5071和TX2N5071（无S/S文件）

1990-07-06

现行

MIL MIL-PRF-19500/302C Notice 4-Validation 4

Semiconductor Device, Transistor, NPN, Silicon, Low-Power, Types 2N2708, JAN
半导体器件 晶体管 NPN 硅 低功率 2N2708型 JAN

2018-11-09

现行

MIL MIL-PRF-19500/302C Notice 3-Validation

Semiconductor Device, Transistor, NPN, Silicon, Low-Power, Types 2N2708, JAN
半导体器件 晶体管 NPN 硅 低功率 2N2708型 JAN

2013-12-05

现行

SJ 20060-1992

半导体分立器件 ３ＤＧ１２０型ＮＰＮ硅高频小功率晶体管详细规范
Semiconductor discrete device--Detail specification for silicon NPN high-frequency low power transistor of Type 3DG120

1992-11-19

现行

SJ 20059-1992

半导体分立器件 ３ＤＧ１１１型ＮＰＮ硅高频小功率晶体管详细规范
Semiconductor discrete device--Detail specification for silicon NPN high-frequency low power transistor of Type 3DG111

1992-11-19

现行

SJ 50033-196-2018

半导体分立器件 3DK5154、3DK5154U3 型硅 NPN 高频大功率开关晶体管详细规范
Semiconductor discrete devices Detail specification for types 3DK5154 and3DK5154U3 high frequency power switching NPN silicon transistors

2018-01-18

现行

SJ 20175-1992

半导体分立器件 ３ＤＧ９１８型ＮＰＮ硅超高频小功率晶体管详细规范
Semiconductor discrete device--Detail specification for NPN silicon ultra-high frequency low-power transistor of Type 3DG918

1992-11-19

现行

MIL MIL-PRF-19500/526J

Semiconductor Device, Transistor, NPN, Silicon, Power, Type 2N3879, JAN, JANTX, and JANTXV
半导体器件 晶体管 NPN 硅 功率 2N3879型 JAN JANTX和JANTXV

2019-05-26

现行

MIL MIL-PRF-19500/407F

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPE 2N3055, JAN, JANTX, AND JANTXV
半导体器件 晶体管 NPN 硅 功率 类型2N3055 JAN JANTX和JANTXV

2018-01-12

现行

MIL MIL-PRF-19500/526H Notice 1-Validation 1

Semiconductor Device, Transistor, NPN, Silicon, Power, Type 2N3879, JAN, JANTX, and JANTXV
半导体器件 晶体管 NPN 硅 功率 2N3879型 JAN JANTX和JANTXV

2017-08-09

现行

MIL MIL-S-19500/176B Notice 4-Validation 3

Semiconductor Device, Transistor, NPN, Silicon, Power Types 2N1047A, 2N1048A, 2N1049A and 2N1050A
半导体器件 晶体管 NPN 硅 功率类型2N1047A 2N1048A 2N1049A和2N1050A

2017-05-04

现行

MIL MIL-S-19500/2B Notice 4-Validation

Semiconductor Device, Transistor, NPN, Silicon, Low-Power Types 2N117, 2N118 and 2N119
半导体器件 晶体管 NPN 硅 低功率2N117、2N118和2N119型

2017-05-05

现行

SJ 50033/95-1995

半导体分立器件3DG144型NPN硅高频低噪声小功率晶体管详细规范
Semiconductor discrete devices Detail specification for type 3DG144 NPN silicon high-frequency Low-noise Low-power transistor

1996-06-14

现行

SJ 50033/94-1995

半导体分立器件3DG143型NPN硅高频低噪声小功率晶体管详细规范
Semiconductor discrete devices Detail specification for type 3DG143 NPN silicon high-frequency Low-noise Low-power transistor

1996-06-14

现行

SJ 50033/93-1995

半导体分立器件3DG142型NPN硅高频低噪声小功率晶体管详细规范
Semiconductor discrete devices Detail specification for type 3DG142 NPN silicon high-frequency Low-noise Low-power transistor

1996-06-14

现行

SJ 50033/33-1994

半导体分立器件 ＦＨ１２１型ＮＰＮ硅功率达林顿晶体管详细规范
Semiconductor discrete device--Detail specification for type FH121 NPN silicon power Darlington transistor

1994-09-30

现行

SJ 50033/31-1994

半导体分立器件 ＦＨ１０１型ＮＰＮ硅功率达林顿晶体管详细规范
Semiconductor discrete device--Detail specification for type FH101 NPN silicon power Darlington transistor

1994-09-30

现行

SJ 50033/34-1994

半导体分立器件 ＦＨ１２９型ＮＰＮ硅功率达林顿晶体管详细规范
Semiconductor discrete device--Detail specification for type FH129 NPN silicon power Darlington transistor

1994-09-30