现行

BS IEC 60747-4-2-2000

Semiconductor devices. Discrete devices-Microwave diodes and transistors. Integrated-circuit microwave amplifiers. Blank detail specification
半导体器件 分立器件

2000-07-15

现行

SJ/T 9014.8.2-2018

半导体器件 分立器件第8-2部分：超结金属氧化物半导体场效应晶体管空白详细规范
Semiconductor devices-Discrete devices Part 8-2: Blank detail specification for super junction metal-oxide-semiconductor field-effect transistors

2018-04-30

现行

BS IEC 60747-12-3-1998

Discrete semiconductor devices and integrated circuits-Optoelectronic devices. Blank detail specification for light-emitting diodes (LEDs) for display applications
分立半导体器件和集成电路 光电器件 显示器用发光二极管空白详细规范

1998-11-15

现行

KS C IEC 60747-4-2(2017 Confirm)

반도체 소자－개별 소자－제4－2부：마이크로파 다이오드 및 트랜지스터－집적 회로 마이크로파 증폭기－개별 규격 지침
半导体器件分立器件第4－2部分:微波二极管和晶体管集成电路微波放大器空白详细规范

2002-12-31

现行

KS C IEC 60747-4-2(2022 Confirm)

반도체 소자－개별 소자－제4－2부：마이크로파 다이오드 및 트랜지스터－집적 회로 마이크로파 증폭기－개별 규격 지침
半导体器件分立器件第4－2部分:微波二极管和晶体管集成电路微波放大器空白详细规范

2002-12-31

现行

GB/T 21039.1-2007

半导体器件 分立器件 第4-1部分：微波二极管和晶体管 微波场效应晶体管空白详细规范
Semiconductor devices - Discrete devices - Part 4-1: Microwave diodes and transistors - Microwave field effect transistors - Blank detail specification

2007-06-29

现行

SJ 50033/30-1994

半导体分立器件 ３ＤＤ１５５型功率晶体管详细规范
Semiconductor discrete device--Detail specification for type 3DD155 power transistor

1994-09-30

现行

SJ 50033/28-1994

半导体分立器件 ２ＣＶ３３４、２ＣＶ３３３８型微带混频二极管详细规范
Semiconductor discrete device--Detail specification for stripline mixer diodes for 2CV334,2CV3338

1994-09-30

现行

SJ 50033/37-1994

半导体分立器件 ３ＤＤ１６４型功率晶体管详细规范
Semiconductor discrete device--Detail specification for type 3DD164 power transistor

1994-09-30

现行

SJ 50033/36-1994

半导体分立器件 ３ＣＤ０５０型功率晶体管详细规范
Semiconductor discrete device--Detail specification for type 3CD050 power transistor

1994-09-30

现行

SJ 50033/107-1996

半导体分立器件2EY621、2EY622、2EY623型体效应二极管详细规范
Semiconductor discrete device Detail specification for Gunn diodes for type 2EY621,2EY622,2EY623

1996-08-30

现行

SJ 50033/108-1996

半导体分立器件2EY5671、2EY5672型体效应二极管详细规范
Semiconductor discrete device Detail specification for Gunn diodes for type 2EY5671,2EY5672

1996-08-30

现行

SJ 20183-1992

半导体分立器件 ３ＤＤ６型功率晶体管详细规范
Semiconductor discrete device--Detail specification for Type 3DD6 power transistor

1992-11-19

现行

SJ 50033/135-1997

半导体分立器件 2CZ10型硅开关整流二极管详细规范
Semiconductor discrete devices Detail specification for type 2CZ10silicon switching rectifier diode

1997-06-17

现行

SJ 50033/78-1995

半导体分立器件 ＣＳ０４６４型砷化镓微波场效应晶体管详细规范
Semiconductor discrete devices--Detail specification for Type CS0464 GaAs microwave FET

1995-05-25

现行

SJ 50033/72-1995

半导体分立器件 ＰＩＮ３２３型ＰＩＮ二极管详细规范
Semiconductor discrete device--Detail specification for Type PIN323 series for PIN diode

1995-05-25

现行

SJ 50033/71-1995

半导体分立器件 ＰＩＮ３４２型ＰＩＮ二极管详细规范
Semiconductor discrete device--Detail specification for Type PIN342 series for PIN diode

1995-05-25

现行

SJ 50033/70-1995

半导体分立器件 ＰＩＮ３５系列ＰＩＮ二极管详细规范
Semiconductor discrete device--Detail specification for Type PIN35 series for PIN diode

1995-05-25

现行

SJ 50033/69-1995

半导体分立器件 ＰＩＮ３０系列ＰＩＮ二极管详细规范
Semiconductor discrete device--Detail specification for Type PIN30 series for PIN diode

1995-05-25

现行

SJ 50033/60-1995

半导体分立器件 ３ＤＫ４０型功率开关晶体管详细规范
Semiconductor discrete device--Detail specification for Type 3DK40 power switching transistor

1995-05-25