现行

KS C IEC 60747-4-2(2017 Confirm)

반도체 소자－개별 소자－제4－2부：마이크로파 다이오드 및 트랜지스터－집적 회로 마이크로파 증폭기－개별 규격 지침
半导体器件分立器件第4－2部分:微波二极管和晶体管集成电路微波放大器空白详细规范

2002-12-31

现行

KS C IEC 60747-4-2(2022 Confirm)

반도체 소자－개별 소자－제4－2부：마이크로파 다이오드 및 트랜지스터－집적 회로 마이크로파 증폭기－개별 규격 지침
半导体器件分立器件第4－2部分:微波二极管和晶体管集成电路微波放大器空白详细规范

2002-12-31

现行

BS IEC 60747-4-2-2000

Semiconductor devices. Discrete devices-Microwave diodes and transistors. Integrated-circuit microwave amplifiers. Blank detail specification
半导体器件 分立器件

2000-07-15

现行

GB/T 21039.1-2007

半导体器件 分立器件 第4-1部分：微波二极管和晶体管 微波场效应晶体管空白详细规范
Semiconductor devices - Discrete devices - Part 4-1: Microwave diodes and transistors - Microwave field effect transistors - Blank detail specification

2007-06-29

现行

BS IEC 60747-12-3-1998

Discrete semiconductor devices and integrated circuits-Optoelectronic devices. Blank detail specification for light-emitting diodes (LEDs) for display applications
分立半导体器件和集成电路 光电器件 显示器用发光二极管空白详细规范

1998-11-15

现行

GB/T 13150-2005

半导体器件 分立器件 电流大于 100A、环境和管壳额定的双向三极晶闸管空白详细规范
Semiconductor devices Discret devices Blank detail specification for bidirectional triode thyristors(triacs),ambient and case-rated,for currents greater than 100A

2005-03-23

现行

BS IEC 60747-4-1-2000

Semiconductor devices. Discrete devices-Microwave diodes and transistors. Microwave field effect transistors. Blank detail specification-BDS for microwave field-effect transistors
半导体器件 分立器件

2000-09-15

现行

BS QC 750104-1991

Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Bipolar transistors for switching applications
电子元件质量评定协调体系规范 半导体分立器件 空白详细规范 开关用双极晶体管

1991-11-15

现行

KS C IEC 60747-7-3(2016 Confirm)

반도체 소자－개별 소자－제7부：바이폴러 트랜지스터－제3절：스위칭용 바이폴러 트랜지스터의 개별 규격 지침
半导体器件分立器件第7部分:双极晶体管第3节:开关用双极晶体管空白详细规范

2006-12-11

现行

GB/T 18904.3-2002

半导体器件 第12-3部分:光电子器件 显示用发光二极管空白详细规范
Semiconductor devices--Part 12-3:Optoelectronic devices--Blank detail specification for light-emitting diodes--Display application

1990-12-06

现行

GB/T 6219-1998

半导体器件 分立器件 第8部分:场效应晶体管 第一篇 1 GHz、5 W以下的单栅场效应晶体管 空白详细规范
Semiconductor devices--Discrete devices--Part 8:Field-effect transistors--Section One:Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz

1998-11-17

现行

BS QC 750112-1988

Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Semiconductor devices. Discrete devices. Field-effect transistors. Blank detail specification for single-gate field-effect transistors, up to 5 W and 1 GHz
电子元件质量评定协调体系规范 空白详细规范 半导体器件 离散设备 场效应晶体管 5W和1GHz以下单栅场效应晶体管空白详细规范

1988-12-15

现行

GB/T 6588-2000

半导体器件 分立器件 第3部分:信号（包括开关）和调整二极管 第1篇 信号二极管、开关二极管和可控雪崩二极管空白详细规范
Semiconductor devices--Discrete devices--Part 3:Signal(including switching) and regulator diodes--Section One--Blank detail specification for signal diodes，switching diodes and controlled-avalanche diodes

2000-10-17

现行

GB/T 13151-2005

半导体器件 分立器件 第6部分:晶闸管 第3篇 电流大于 100A、环境和管壳额定的反向阻断三极晶闸管空白详细规范
Semiconductor devices Discrete devices Part 6:Thyristors Section Three-Blank detail specification for reverse blocking triode thyristors,ambient and case-rated,for currents greater than 100A

2005-03-23

现行

KS C IEC 60747-2-2(2016 Confirm)

반도체 소자－개별 소자－제2부：정류 다이오드－제2절：100 A 초과의 주위 및 케이스 정격 정류 다이오드 (애벌란시 정류 다이오드 포함)의 개별 규격 지침
半导体器件分立器件第2部分:整流二极管第2节:额定环境和外壳电流大于100A的整流二极管（包括雪崩整流二极管）空白详细规范

2006-12-11

现行

KS C IEC 60747-2-2(2021 Confirm)

반도체 소자－개별 소자－제2부：정류 다이오드－제2절：100 A 초과의 주위 및 케이스 정격 정류 다이오드 (애벌란시 정류 다이오드 포함)의 개별 규격 지침
半导体器件分立器件第2部分:整流二极管第2节:额定环境和外壳电流大于100A的整流二极管（包括雪崩整流二极管）空白详细规范

2006-12-11

现行

KS C IEC 60748-2-8(2017 Confirm)

반도체 소자－집적 회로－제2－8부：디지털 집적 회로－스태틱 메모리
半导体器件集成电路第2部分:数字集成电路第8节:集成电路静态读写存储器空白详细规范

2002-11-30

现行

KS C IEC 60748-2-8(2022 Confirm)

반도체 소자－집적 회로－제2－8부：디지털 집적 회로－스태틱 메모리
半导体器件集成电路第2部分:数字集成电路第8节:集成电路静态读/写存储器空白详细规范

2002-11-30

现行

GB/T 18904.2-2002

半导体器件 第12-2部分:光电子器件 纤维光学系统或子系统用带尾纤的激光二极管模块空白详细规范
Semiconductor devices--Part 12-2:Optoelectronic devices--Blank detail specification for laser diodes modules with pigtail for fiber optic systems or sub-systems

2002-12-04

现行

GB/T 7576-1998

半导体器件 分立器件 第7部分:双极型晶体管 第四篇 高频放大管壳额定双极型晶体管空白详细规范
Semiconductor devices--Discrete devices--Part 7:Bipolar transistors--Section Four:Blank detail specification for case-rated bipolartransistors for high-frequency amplification

1998-11-17