现行

MIL MIL-PRF-19500/638B Notice 2-Validation

Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel Silicon, Type 2N7410, JANSD and JANSR
半导体器件 场效应辐射硬化（总剂量和单一事件效应）晶体管 N沟道硅 2N7410 Jansd和Jansr

2016-05-24

现行

MIL MIL-PRF-19500/639A Notice 2-Validation

Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects)Transistor, P-Channel Silicon Type 2N7411 JANSD and JANSR
半导体器件 场效应辐射硬化（总剂量和单事件效应）晶体管 P沟道硅2N7411型JANSD和JANSR

2011-07-15

现行

MIL MIL-PRF-19500/639A Notice 3-Validation

Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects)Transistor, P-Channel Silicon Type 2N7411 JANSD and JANSR
半导体器件 场效应辐射硬化（总剂量和单事件效应）晶体管 P沟道硅2N7411型JANSD和JANSR

2016-05-24

现行

MIL MIL-PRF-19500/658

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON TYPE 2N7438, AND 2N7439 JANSD AND JANSR
半导体器件 场效应抗辐射（总剂量和单粒子效应）晶体管 P沟道硅类型2N7438 以及2N7439 JANSD和JANSR

1998-05-28

现行

MIL MIL-PRF-19500/659 Notice 1-Validation

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON TYPE 2N7440, AND 2N7441 JANSD AND JANSR
半导体器件 场效应辐射硬化（总剂量和单事件效应）晶体管 P沟道硅型2N7440和2N7441 JANSD和JANSR

2003-06-16

现行

MIL MIL-PRF-19500/658 Notice 1-Validation

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON TYPE 2N7438, AND 2N7439 JANSD AND JANSR
半导体器件 场效应辐射硬化（总剂量和单事件效应）晶体管 P沟道硅型2N7438和2N7439 JANSD和JANSR

2003-03-13

现行

MIL MIL-PRF-19500/658 Notice 3-Validation

Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, P-Channel Silicon Type 2N7438, and 2N7439 JANSD and JANSR
半导体器件 场效应辐射硬化（总剂量和单事件效应）晶体管 P沟道硅型2N7438和2N7439 JANSD和JANSR

2016-05-24

现行

ASTM F1892-12(2018)

Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices
半导体器件电离辐射（总剂量）效应试验标准指南

2018-03-01

现行

MIL MIL-PRF-19500/684H

SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), TYPES 2N7472U2, 2N7473U2, AND 2N7474U2, JANTXVR AND JANSR
半导体器件、晶体管、场效应、硅、N沟道、抗辐射（总剂量和单粒子效应）、2N7472U2、2N7473U2和2N7474U2、JANTXVR和JANSR型

2016-11-17

现行

MIL MIL-PRF-19500/685H Amendment 1

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1 AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR
半导体器件 场效应辐射硬化晶体管 N沟道 硅 2N7475T1、2N7476T1和2N7477T1型（总剂量和单事件效应） JANTXVR和JANSR

2018-09-14

现行

MIL MIL-PRF-19500/684H Amendment 2

SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), TYPES 2N7472U2, 2N7473U2, AND 2N7474U2, JANTXVR AND JANSR
半导体器件 晶体管 场效应 硅 N沟道 辐射硬化（总剂量和单事件效应） 类型2N7472U2 2N7473U2和2N7474U2 JANTXVR和JANSR

2020-01-31

现行

MIL MIL-PRF-19500/707 Notice 1-Validation

SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED(TOTAL DOSE & SINGLE EVENT EFFECTS)TRANSISTOR N-CHANNEL SILICON TYPE 2N7500U5 2N7501U5 2N7502U5 JANTXVR JANSR
半导体器件场效应辐射硬化（总剂量和单事件效应）晶体管N沟道硅型2N7500U5 2N7501U5 2n750 2u5 JANTXVR JANSR

2007-04-11

现行

MIL MIL-PRF-19500/684 Notice 1-Amendment 1

SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TYPES 2N7472U2, 2N7473U2 AND 2N7474U2 JANTXVR AND JANSR
半导体器件 晶体管 场效应 硅 N沟道 辐射硬化（总剂量和单事件效应）类型2N7472U2 2N7473U2和2N7474U2 JANTXVR和JANSR

2001-06-07

现行

MIL MIL-PRF-19500/741B

Semiconductor Device, Field Effect, Radiation Hardened (Total Dose and Single Event Effects) Transistor Die, N-Channel and P-Channel, Silicon, Various Types, JANHC and JANKC
半导体器件 场效应 抗辐射（总剂量和单粒子效应）晶体管管芯 N沟道和P沟道 硅 各种类型 JANHC和JANKC

2018-04-13

现行

MIL MIL-PRF-19500/741B Amendment 1

Semiconductor Device, Field Effect, Radiation Hardened (Total Dose and Single Event Effects) Transistor Die, N-Channel and P-Channel, Silicon, Various Types, JANHC and JANKC
半导体器件 场效应 辐射硬化（总剂量和单事件效应）晶体管管芯 N沟道和P沟道 硅 各种类型 JANHC和JANKC

2019-11-18

现行

MIL MIL-PRF-19500/661F Amendment 1

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7444, 2N7434, 2N7391 AND 2N7392 JANTXVR; AND JANSR
半导体器件 场效应辐射硬化（总剂量和单事件效应）晶体管 N沟道 硅类型2N7444、2N7434、2N7391和2N7392 JANTXVR；和JANSR

2018-11-23

现行

MIL MIL-PRF-19500/741A Notice 1-Validation 1

Semiconductor Device, Field Effect, Radiation Hardened (Total Dose and Single Event Effects) Transistor Die, N-Channel and P-Channel, Silicon, Various Types, JANHC and JANKC
半导体器件 场效应 辐射硬化（总剂量和单事件效应）晶体管管芯 N沟道和P沟道 硅 各种类型 JANHC和JANKC

2013-12-06

现行

MIL MIL-PRF-19500/668

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTOR, P-CHANNEL, SILICON TYPE 2N7462U1, JANSD-R (NO S/S DOCUMENT)
半导体器件 场效应辐射硬化（仅总剂量）晶体管 P沟道 硅型2N7462U1 JANSD-R（无S/S文件）

1999-10-15

现行

MIL MIL-PRF-19500/668 Notice 1-Cancellation

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTOR, P-CHANNEL, SILICON TYPE 2N7462U1, JANSD-R (NO S/S DOCUMENT)
半导体器件 场效应辐射硬化（仅总剂量）晶体管 P沟道 硅型2N7462U1 JANSD-R（无文件）

2005-06-22

现行

MIL MIL-PRF-19500/654

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON TYPE 2N430T1 JANTXVD, JANTXVR, AND JANSR(NO S/S DOCUMENT)
半导体器件、场效应抗辐射（总剂量和单粒子效应）晶体管、N沟道硅2N430T1型JANTXVD、JANTXVR和JANSR（无S/S文件）

2000-03-27