IEC 61788-17:20 21作为IEC 61788-17:20 21 RLV提供，其中包含国际标准及其红线版本，显示了与上一版本相比技术内容的所有变化。 IEC 61788-17:20 21规定了通过使用三次谐波电压的感应方法测量大面积高温超导（HTS）薄膜中的局部临界电流密度（Jc）及其分布。精确测量的最重要考虑因素是通过电场标准确定液氮温度下的Jc，并根据其频率依赖性获得电流-电压特性。虽然可以在施加的DC磁场中测量Jc[20][21]，但本文的范围仅限于没有DC磁场的测量。该技术本质上测量临界片电流，其是Jc和膜厚度d的乘积。HTS膜的Jcd的范围和测量分辨率如下。 -Jcd:200A/m至32kA/m(基于结果，但不限于此)。 -测量分辨率:100A/m(基于结果，但不限于此)。

IEC 61788-17:2021 is available as IEC 61788-17:2021 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.

IEC 61788-17:2021 specifies the measurements of the local critical current density (Jc) and its distribution in large-area high-temperature superconducting (HTS) films by an inductive method using third-harmonic voltages. The most important consideration for precise measurements is to determine Jc at liquid nitrogen temperatures by an electric-field criterion and obtain current-voltage characteristics from its frequency dependence. Although it is possible to measure Jc in applied DC magnetic fields [20] [21], the scope of this document is limited to the measurement without DC magnetic fields. This technique intrinsically measures the critical sheet current that is the product of Jc and the film thickness d. The range and measurement resolution for Jcd of HTS films are as follows.
- Jcd: from 200 A/m to 32 kA/m (based on results, not limitation).
- Measurement resolution: 100 A/m (based on results, not limitation).