本标准适用于宽禁带半导体辐射探测器，如用于室温电离辐射检测和测量的碲化镉（CdTe）、碲化镉锌（CdZnTe，以下简称CZT）和碘化汞（HgI2）；包括伽马射线、X射线和带电粒子。本文所述的测量程序主要适用于具有平面、半球或其他几何形状的探测器元件，其中两种极性的电荷载流子都有助于输出信号。 当设备是系统的一个组成部分时，用户可能无法单独在探测器上进行测试。在这种情况下，探测器元件的测试必须由制造商和用户共同协商确定。

This standard applies to wide-bandgap semiconductor radiation detectors, such as cadmium telluride (CdTe), cadmium-zinc-telluride (CdZnTe, referred to herein as CZT), and mercuric iodide (HgI2) used in the detection and measurement of ionizing radiation at room temperature; gamma rays, X-rays, and charged particles are covered. The measurement procedures described herein apply primarily to detector elements having planar, hemispherical, or other geometries in which charge carriers of both polarities contribute to the output signal. When the devices are an integral part of a system, it may not be possible for a user to make tests on the detector alone. In this instance, tests on the detector element must be established by mutual agreement between the manufacturer and the user.