现行

MIL MIL-PRF-19500/295G

Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2608, JAN and UB
半导体器件 场效应晶体管 P沟道 硅 2N2608型 JAN和UB

2020-02-05

现行

MIL MIL-PRF-19500/751 Notice 1-Validation

Semiconductor Device, Field Effect Transistor, P-Channel, Silicon, Type 2N7508U3, JANTX, JANTXV, and JANS
半导体器件 场效应晶体管 P沟道 硅 2N7508U3型 JANTX JANTXV和JANS

2013-08-13

现行

MIL MIL-PRF-19500/296G

SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTORS, P-CHANNEL, SILICONTYPES 2N2609, JAN, AND UB
半导体器件、场效应晶体管、P沟道、硅型2N2609、JAN和UB

2020-02-06

现行

MIL DESC 89026A

SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON (SUPERSEDING DESC 89026)
半导体器件 场效应晶体管 N沟道 硅（取代DESC 89026）

1992-12-11

现行

MIL MIL-PRF-19500/607B Notice 2-Validation

Semiconductor Device, Field Effect Transistors, N-Channel and P-Channel, Silicon, Type 2N7337 JAN, JANTX, JANTXV, JANS, and JANHC
半导体器件 场效应晶体管 N沟道和P沟道 硅 2N7337 JAN、JANTX、JANTSV、JANS和JANHC型

2016-05-24

现行

MIL MIL-PRF-19500/607B Notice 1-Validation

Semiconductor Device, Field Effect Transistors, N-Channel and P-Channel, Silicon, Type 2N7337 JAN, JANTX, JANTXV, JANS, and JANHC
半导体器件 场效应晶体管 N沟道和P沟道 硅 2N7337 JAN、JANTX、JANTSV、JANS和JANHC型

2011-07-14

现行

MIL MIL-PRF-19500/659 Notice 2-Validation

Semiconductor Device, Field Effect Radiation Hardened Transistor, P-Channel Silicon Type 2N7440, and 2N7441 JANSD and JANSR
半导体器件 场效应辐射硬化晶体管 P沟道硅型2N7440和2N7441 JANSD和JANSR

2011-07-15

现行

MIL MIL-PRF-19500/659A Notice 1-Validation 1

Semiconductor Device, Field Effect Radiation Hardened Transistor, P-Channel Silicon Type 2N7440, and 2N7441 JANSD and JANSR
半导体器件 场效应辐射硬化晶体管 P沟道硅型2N7440和2N7441 JANSD和JANSR

2019-02-26

现行

MIL MIL-PRF-19500/633D Notice 1-Validation 1

Semiconductor Device, Field Effect Radiation Hardened Transistors, P-Channel Silicon, Types 2N7403 and 2N7404, JANSD and JANSR
半导体器件 场效应辐射硬化晶体管 P沟道硅 2N7403和2N7404型 JANSD和JANSR

2018-11-09

现行

MIL MIL-S-19500/296B Notice 1-Inactivation

SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPE 2N2609 (SUPERSEDING MIL-S-19500/296A)
半导体器件 场效应晶体管 P沟道 硅型2N2609（取代MIL-S-19500/296A）

1999-06-07

现行

MIL MIL-PRF-19500/633E

Semiconductor Device, Field Effect Radiation Hardened Transistors, P-Channel Silicon, Types 2N7403 and 2N7404, JANSD and JANSR
半导体器件 场效应抗辐射晶体管 P沟道硅 2N7403和2N7404型 JANSD和JANSR

2019-10-28

现行

MIL MIL-PRF-19500/659A

Semiconductor Device, Field Effect Radiation Hardened Transistor, P-Channel Silicon Type 2N7440, and 2N7441 JANSD and JANSR
半导体器件 场效应抗辐射晶体管 P沟道硅型2N7440 以及2N7441 JANSD和JANSR

2014-04-02

现行

MIL MIL-S-19500/296B

SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPE 2N2609 (SUPERSEDING MIL-S-19500/296A)
半导体器件 场效应晶体管 P沟道 硅型2N2609（取代MIL-S-19500/296A）

1993-02-05

现行

SJ 50033/86-1995

半导体分立器件 ＣＳ５１１４～ＣＳ５１１６型硅Ｐ沟道耗尽型场效应晶体管详细规范
Semiconductor discrete devices--Detail specification for Type CS5114~CS5116 silicon P-channel deplition mode field-effect transistor

1995-05-25

现行

SJ 50033/83-1995

半导体分立器件 ＣＳ１３９型硅Ｐ沟道ＭＯＳ增强型场效应晶体管详细规范
Semiconductor discrete devices--Detail specification for Type CS139 silicon P-channel MOS enhancement mode field-effect transistor

1995-05-25

现行

MIL MIL-PRF-19500/657B Notice 1-Validation 1

Semiconductor Device, Field Effect, Radiation Hardened, Transistor Die, N and P-Channel, Silicon Various Types JANHC and JANKC
半导体器件 场效应 辐射硬化 晶体管管芯 N和P沟道 各种类型的硅JANHC和JANKC

2015-12-09

现行

MIL MIL-S-19500/295B Notice 1-Inactivation

SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, P-CHANNEL SILICON, TYPES 2N2608 JAN (SUPERSEDING MIL-S-19500/295A)
半导体器件 场效应晶体管 P沟道硅 2n2608jan型（取代MIL-S-19500/295A）

1999-06-25

现行

MIL MIL-PRF-19500/657C

Semiconductor Device, Field Effect, Radiation Hardened, Transistor Die, N and P-Channel, Silicon Various Types JANHC and JANKC
半导体器件 场效应 抗辐射 晶体管管芯 N沟道和P沟道 硅各种类型的JANHC和JANKC

2020-03-10

现行

MIL MIL-S-19500/295B

SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, P-CHANNEL SILICON, TYPES 2N2608 JAN (SUPERSEDING MIL-S-19500/295A)
半导体器件 场效应晶体管 P沟道硅 2N2608-JAN型（取代MIL-S-19500/295A）

1992-10-05

现行

MIL MIL-PRF-19500/639A Notice 3-Validation

Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects)Transistor, P-Channel Silicon Type 2N7411 JANSD and JANSR
半导体器件 场效应辐射硬化（总剂量和单事件效应）晶体管 P沟道硅2N7411型JANSD和JANSR

2016-05-24