现行

MIL DESC 5962-92121

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
微电路、存储器、数字、CMOS、电可擦除可编程逻辑器件、单片硅

1992-11-24

现行

MIL DESC 5962-93168

MICROCIRCUIT, MEMORY, DIGITAL, CMOS ELECTRICALLY ERASABLE PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
微电路、存储器、数字、CMOS电可擦除可编程逻辑阵列、单片硅

1994-09-08

现行

MIL DESC 5962-93247

MICROCIRCUIT, MEMORY, DIGITAL, CMOS ELECTRICALLY ERASABLE PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
微电路、存储器、数字、CMOS电可擦除可编程逻辑阵列、单片硅

1995-02-07

现行

MIL DESC 5962-93247 Notice A-Revision

MICROCIRCUIT, MEMORY, DIGITAL, CMOS ELECTRICALLY ERASABLE PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
微电路、存储器、数字、CMOS电可擦除可编程逻辑阵列、单片硅

1995-05-30

现行

MIL DESC 5962-93168 Notice A-Revision

MICROCIRCUIT, MEMORY, DIGITAL, CMOS ELECTRICALLY ERASABLE PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
微电路、存储器、数字、CMOS电可擦除可编程逻辑阵列、单片硅

1995-02-03

现行

MIL DESC 5962-93087A

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ERASABLE PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON (SUPERSEDING DESC 5962-93087)
微电路、存储器、数字、CMOS、电可擦除可编程逻辑阵列、单片硅（取代DESC 5962-93087）

1993-07-13

现行

MIL DSCC 5962-95588A

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON (SUPERSEDING DESC 5962-95588)
微电路、存储器、数字、CMOS、电可擦除可编程逻辑器件、单片硅（取代DESC 5962-95588）

2002-05-08

现行

MIL DSCC 5962-95587A

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON (SUPERSEDING DESC 5962-95587)
微电路、存储器、数字、CMOS、电可擦除可编程逻辑器件、单片硅（取代DESC 5962-95587）

2002-05-03

现行

MIL DSCC 5962-94760A

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON (SUPERSEDING DESC 5962-94760)
微电路、存储器、数字、CMOS、电可擦除可编程逻辑器件、单片硅（取代DESC 5962-94760）

2002-04-17

现行

MIL DSCC 5962-94761A

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON (SUPERSEDING DESC 5962-94761)
微电路、存储器、数字、CMOS、电可擦除可编程逻辑器件、单片硅（取代DESC 5962-94761）

2002-04-17

现行

MIL DSCC 5962-94668A

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON (SUPERSEDING DESC 5962-94668)
微电路、存储器、数字、CMOS、电可擦除可编程逻辑器件、单片硅（取代DESC 5962-94668）

2002-03-21

现行

MIL DSCC 5962-93085A

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON (SUPERSEDING DESC 5962-93085)
微电路、存储器、数字、CMOS、电可擦除可编程逻辑器件、单片硅（取代DESC 5962-93085）

2002-03-21

现行

MIL DSCC 5962-94762A

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON (SUPERSEDING DESC 5962-94762)
微电路、存储器、数字、CMOS、电可擦除可编程逻辑器件、单片硅（取代DESC 5962-94762）

2002-04-18

现行

MIL MIL-M-38510/260

MICROCIRCUITS, MEMORY, DIGITAL, CMOS 8K X 8 BIT, ELECTRICALLY ERASABLE, PROGRAMMABLE READ-ONLY MEMORY (EEPROM) MONOLITHIC SILICON
微电路、存储器、数字、CMOS 8K X 8位、电可擦除、可编程只读存储器（EEPROM）单片硅

1989-01-06

现行

MIL MIL-M-38510/261

MICROCIRCUITS, MEMORY, DIGITAL, CMOS 32K X 8-BIT, ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY (EEPROM), MONOLITHIC SILICON
微电路、存储器、数字、CMOS 32K X 8位、电可擦除可编程只读存储器（EEPROM）、单片硅

1989-03-27

现行

MIL MIL-M-38510/260 Notice 3-Validation 2

MICROCIRCUITS, MEMORY, DIGITAL, CMOS 8K X 8 BIT, ELECTRICALLY ERASABLE, PROGRAMMABLE READ-ONLY MEMORY (EEPROM) MONOLITHIC SILICON
微型电路 存储器 数字 CMOS 8K X 8位 电可擦除 可编程只读存储器（EEPROM）单片硅

2006-02-06

现行

MIL MIL-M-38510/261 Notice 3-Validation 2

MICROCIRCUITS, MEMORY, DIGITAL, CMOS 32K X 8-BIT, ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY (EEPROM), MONOLITHIC SILICON
微型电路 存储器 数字 CMOS 32K X 8位 电可擦除可编程只读存储器（EEPROM） 单片硅

2006-02-06

现行

MIL MIL-M-38510/261 Notice 2-Validation 1

MICROCIRCUITS, MEMORY, DIGITAL, CMOS 32K X 8-BIT, ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY (EEPROM), MONOLITHIC SILICON
微型电路 存储器 数字 CMOS 32K X 8位 电可擦除可编程只读存储器（EEPROM） 单片硅

2001-05-01

现行

MIL MIL-M-38510/260 Notice 2-Validation 1

MICROCIRCUITS, MEMORY, DIGITAL, CMOS 8K X 8 BIT, ELECTRICALLY ERASABLE, PROGRAMMABLE READ-ONLY MEMORY (EEPROM) MONOLITHIC SILICON
微型电路 存储器 数字 CMOS 8K X 8位 电可擦除 可编程只读存储器（EEPROM）单片硅

2001-05-01

现行

MIL MIL-M-38510/261 Notice 1-Inactivation 1

MICROCIRCUITS, MEMORY, DIGITAL, CMOS 32K X 8-BIT, ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY (EEPROM), MONOLITHIC SILICON
微型电路 存储器 数字 CMOS 32K X 8位 电可擦除可编程只读存储器（EEPROM） 单片硅

1995-07-24