隧道和层间氧化物的优化对于卓越的EEPROM操作至关重要。本文证明了阶乘和响应面实验方法证明了浮栅沉积和掺杂工艺对形成可靠的EEPROM介质至关重要。此外，由于工艺相互作用，这些氧化物不应单独优化。相反，隧道和层间过程应被视为一个单一的过程模块。

OPTIMIZATION OF TUNNEL AND INTERLEVEL OXIDES IS ESSENTIAL FOR SUPERIOR EEPROM OPERATION. THIS PAPER DEMONSTRATES THAT FACTORIAL AND RESPONSE SURFACE EXPERIMENTAL METHODS PRODUCED EVIDENCE THAT THE FLOATING GATE DEPOSITION AND DOPING PROCESSES ARE CRITICAL TO THE FORMATION OF RELIABLE EEPROM DIELECTRICS. FURTHER, THESE OXIDES SHOULD NOT BE OPTIMIZED INDEPENDENTLY DUE TO PROCESS INTERACTIONS. RATHER, THE TUNNEL AND INTERLEVEL PROCESS SHOULD BE CONSIDERED AS A SINGLE PROCESS MODULE.