1.1 本指南为SIMS分析员提供了一种从分层试样（有机和无机）分析中获得的SIMS溅射数据确定界面宽度的方法。本指南不适用于从具有薄标记的样品或没有界面的样品（如离子注入样品）的分析中获得的数据。 1.2 本指南不描述优化界面宽度或深度分辨率的方法。 1.3 本标准并非旨在解决与其使用相关的所有安全问题（如有）。本标准的用户有责任在使用前制定适当的安全、健康和环境实践，并确定监管限制的适用性。 1.4 本国际标准是根据世界贸易组织技术性贸易壁垒（TBT）委员会发布的《关于制定国际标准、指南和建议的原则的决定》中确立的国际公认标准化原则制定的。 ====意义和用途====== 5.1 尽管希望通过使用标准样品和本指南测量任何未知样品中的轮廓失真程度，但界面宽度（轮廓失真）的测量可能对每个样品成分都是唯一的 ( 1. , 2. ) . 4. 本指南描述了一种方法，用于确定所选操作条件下特定界面的唯一宽度。 其旨在提供一种检查仪器性能是否正确或一致或两者兼有的方法。根据本指南，对同一样品进行定期分析，然后测量界面宽度，将提供这些检查。 5.2 本指南中描述的程序适用于具有层间界面的任何分层样品，其中一层中存在指定元素，另一层中不存在指定元素。已经证明，特别是对于SIM卡 ( 3. , 4. ) 通常用于表面分析 ( 5. , 6. ) 只有严格的校准方法才能确定准确的界面宽度。这样的程序非常耗时。因此，使用本指南中描述的程序获得的界面宽度测量可能包含显著的系统误差 ( 7. ) . 因此，这种界面宽度测量可能与用其他方法进行的类似测量无关。然而，这并不减少其作为检查正确或一致的仪器性能或两者的使用。 5.3 本指南可用于元素和分子深度剖面，前提是材料在整个覆盖层深度内具有恒定的溅射速率，并且发生最小的层间混合。有关有机深度剖面期间界面宽度测量的更多详细信息，请参阅Mahoney ( 8. ) .

1.1 This guide provides the SIMS analyst with a method for determining the width of interfaces from SIMS sputtering data obtained from analyses of layered specimens (both organic and inorganic). This guide does not apply to data obtained from analyses of specimens with thin markers or specimens without interfaces such as ion-implanted specimens. 1.2 This guide does not describe methods for the optimization of interface width or the optimization of depth resolution. 1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use. 1.4 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee. ====== Significance And Use ====== 5.1 Although it would be desirable to measure the extent of profile distortion in any unknown sample by using a standard sample and this guide, measurements of interface width (profile distortion) can be unique to every sample composition ( 1 , 2 ) . 4 This guide, describes a method that determines the unique width of a particular interface for the chosen set of operating conditions. It is intended to provide a method for checking on proper or consistent, or both, instrument performance. Periodic analysis of the same sample followed by a measurement of the interface width, in accordance with this guide, will provide these checks. 5.2 The procedure described in this guide is adaptable to any layered sample with an interface between layers in which a nominated element is present in one layer and absent from the other. It has been shown that for SIMS in particular ( 3 , 4 ) and for surface analysis in general ( 5 , 6 ) , only rigorous calibration methods can determine accurate interface widths. Such procedures are prohibitively time-consuming. Therefore the interface width measurement obtained using the procedure described in this guide may contain significant systematic error ( 7 ) . Therefore, this measure of interface width may have no relation to similar measures made with other methods. However, this does not diminish its use as a check on proper or consistent instrument performance, or both. 5.3 This guide can be used for both elemental and molecular depth profiles, provided that the materials have constant sputter rates throughout the depth of the overlayer, and minimal interlayer mixing is occurring. For more detailed information regarding measurements of interface widths during organic depth profiling, please see Mahoney ( 8 ) .