MIL MIL-PRF-19500/740 Amendment 1(amendment incorporated)-半导体器件场效应辐射硬化（总剂量和单事件效应）四晶体管 N沟道和P沟道硅类型2N7521U、2N7522U、2N7515、and 2N7526、JANTVR和F以及JANSR和F-国家数字标准馆

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Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Quad Transistor, N-Channel and P-Channel, Silicon Types 2N7521U, 2N7522U, 2N7525, AND 2N7526, JANTXVR and F and JANSR and F 半导体器件场效应辐射硬化（总剂量和单事件效应）四晶体管 N沟道和P沟道硅类型2N7521U、2N7522U、2N7515、and 2N7526、JANTVR和F以及JANSR和F

发布日期： 2012-06-15

本规范涵盖了四N沟道和四P沟道、增强模式、MOSFET、辐射硬化（总剂量和单事件效应（SEE））、功率晶体管的性能要求。根据MIL-PRF-19500的规定，每种设备类型都有两个级别的产品保证，即雪崩能量最大额定值（EAS）和最大雪崩电流（IAS）。有关JANHC和JANKC模具版本，请参见6.5。

This specification covers the performance requirements for quad N-channel and quad P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions.

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发布单位或类别：美国-美国军事规范和标准

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