首页 馆藏资源 舆情信息 标准服务 科研活动 关于我们
现行 MIL MIL-STD-750-4 Change 1
到馆提醒
收藏跟踪
购买正版
Diode Electrical Test Methods for Semiconductor Devices Part 4: Test Methods 4000 through 4999 半导体器件的二极管电气试验方法第4部分:试验方法4000-499
发布日期: 2014-08-15
本测试方法标准的第4部分为半导体二极管的基本电气测试建立了统一的测试方法,以确定其对自然元素和军事行动周围条件的有害影响的抵抗力。就本标准而言,术语“器件”包括晶体管、二极管、电压调节器、整流器、隧道二极管和其他相关部件。多部分测试方法标准的这一部分旨在仅适用于半导体器件。
Part 4 of this test method standard establishes uniform test methods for the basic electrical testing of semiconductor diodes to determine resistance to deleterious effects of natural elements and conditions surrounding military operations. For the purpose of this standard, the term "devices" includes such items as transistors, diodes, voltage regulators, rectifiers, tunnel diodes, and other related parts. This part of a multipart test method standard is intended to apply only to semiconductor devices.
分类信息
发布单位或类别: 美国-美国军事规范和标准
关联关系
研制信息
相似标准/计划/法规
现行
MIL MIL-STD-750-4 w/Change 3
Diode Electrical Test Methods for Semiconductor Devices Part 4: Test Methods 4000 through 4999
半导体器件的二极管电气试验方法第4部分:试验方法4000-499
2019-12-30
现行
MIL MIL-STD-750-4 Change 2
Diode Electrical Test Methods for Semiconductor Devices Part 4: Test Methods 4000 through 4999
半导体器件的二极管电气试验方法第4部分:试验方法4000-499
2017-08-18
现行
MIL MIL-STD-750-4
Diode Electrical Test Methods for Semiconductor Devices Part 4: Test Methods 4000 through 4999
半导体器件二极管电气试验方法第4部分:试验方法4000至4999
2012-01-03
现行
IEC 60747-5-8-2019
Semiconductor devices - Part 5-8: Optoelectronic devices - Light emitting diodes - Test method of optoelectronic efficiencies of light emitting diodes
半导体器件第5-8部分:光电子器件发光二极管发光二极管光电效率试验方法
2019-11-13
现行
IEC TR 60747-5-12-2021
Semiconductor devices - Part 5-12: Optoelectronic devices - Light emitting diodes - Test method of LED efficiencies
半导体器件第5-12部分:光电子器件发光二极管LED效率的试验方法
2021-10-13
现行
IEC 60747-5-11-2019
Semiconductor devices - Part 5-11: Optoelectronic devices - Light emitting diodes - Test method of radiative and nonradiative currents of light emitting diodes
半导体器件第5-11部分:光电子器件发光二极管发光二极管辐射电流和非辐射电流的试验方法
2019-12-11
现行
IEC 62830-4-2019
Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 4: Test and evaluation methods for flexible piezoelectric energy harvesting devices
半导体器件.能量收集和产生用半导体器件.第4部分:柔性压电能量收集装置的试验和评估方法
2019-02-27
现行
MIL MIL-STD-750-3 Change 1
Transistor Electrical Test Methods for semiconductor Devices Part 3: Test Methods 3000 through 3999
半导体器件晶体管电气试验方法第3部分:试验方法3000至3999
2019-12-09
现行
IEC 60747-5-14-2022
Semiconductor devices - Part 5-14: Optoelectronic devices - Light emitting diodes - Test method of the surface temperature based on the thermoreflectance method
半导体器件第5-14部分:光电子器件发光二极管基于热反射法的表面温度试验方法
2022-03-04
现行
IEC 60747-5-15-2022
Semiconductor devices - Part 5-15: Optoelectronic devices - Light emitting diodes - Test method of the flat-band voltage based on the electroreflectance spectroscopy
半导体器件第5-15部分:光电子器件发光二极管基于电反射光谱法的平带电压试验方法
2022-01-07
现行
MIL MIL-STD-750-3
DEPARTMENT OF DEFENSE TEST METHOD STANDARD TRANSISTOR ELECTRICAL TEST METHODS FOR SEMICONDUCTOR DEVICES PART 3: TEST METHODS 3000 THROUGH 3999
国防部试验方法半导体器件标准晶体管电气试验方法第3部分:试验方法3000至3999
2012-01-03
现行
IEC 63275-2-2022
Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation
半导体器件.碳化硅分立金属氧化物半导体场效应晶体管的可靠性试验方法.第2部分:由体二极管操作引起的双极退化的试验方法
2022-05-11
现行
IEC 60747-5-16-2023
Semiconductor devices - Part 5-16: Optoelectronic devices - Light emitting diodes - Test method of the flat-band voltage of GaN-based light emitting diodes based on the photocurrent spectroscopy
半导体器件.第5-16部分:光电子器件.发光二极管.基于光电流光谱的GaN基发光二极管的平带电压的试验方法
2023-03-28
现行
IEC 60747-5-9-2019
Semiconductor devices - Part 5-9: Optoelectronic devices - Light emitting diodes - Test method of the internal quantum efficiency based on the temperature-dependent electroluminescence
半导体器件第5-9部分:光电子器件发光二极管基于温度依赖性电致发光的内部量子效率试验方法
2019-12-11
现行
UNE-EN 60749-4-2003
Semiconductor devices - Mechanical and climatic test methods -- Part 4: Damp heat, steady state, highly accelerated stress test (HAST).
半导体器件.机械和气候试验方法.第4部分:湿热、稳态、高加速应力试验(HAST)
2003-05-30
现行
IEC 60749-4-2017
Semiconductor devices - Mechanical and climatic test methods - Part 4: Damp heat, steady state, highly accelerated stress test (HAST)
半导体器件 - 机械和气候测试方法第4部分:潮湿热 稳态 高加速应力测试(HAST)
2017-03-03
现行
KS C IEC 60749-4
반도체 소자 — 기계 및 기후적 시험방법 — 제4부: 가습 가열, 평형 상태,가속 스트레스 시험
半导体器件 - 机械和气候测试方法第4部分:潮湿热 稳态 高加速应力测试(HAST)
2020-07-23
现行
GB/T 4937.4-2012
半导体器件 机械和气候试验方法 第4部分:强加速稳态湿热试验(HAST)
Semiconductor devices - Mechanical and climatic test methods - Part 4: Damp heat, steady state, highly accelerated stress test (HAST)
2012-11-05
现行
IEC 62047-44-2024
Semiconductor devices - Micro-electromechanical devices - Part 44: Test methods for dynamic performances of MEMS resonant electric-field-sensitive devices
半导体器件.微机电器件.第44部分:MEMS谐振电场敏感器件动态性能的试验方法
2024-02-22
现行
IEC 60747-5-10-2019
Semiconductor devices - Part 5-10: Optoelectronic devices - Light emitting diodes - Test method of the internal quantum efficiency based on the room-temperature reference point
半导体器件第5-10部分:光电子器件发光二极管基于室温基准点的内部量子效率试验方法
2019-12-11