IEC 60749-34:2010描述了用于确定半导体器件对由于内部半导体管芯和内部连接器的循环功率耗散而引起的热应力和机械应力的电阻的测试方法。当周期性地施加和移除用于正向传导（负载电流）的低压操作偏压时，就会发生这种情况，从而导致温度的快速变化。功率循环测试旨在模拟电力电子中的典型应用，是对高温工作寿命的补充（参见IEC 60749-23）。暴露于本试验可能不会导致与暴露于空气-空气温度循环或使用双液浴法快速温度变化相同的失效机制。该测试会导致磨损，被认为是破坏性的。第二版取消并取代了2004年出版的第一版，构成了技术修订。与上一版相比的重大变化包括: -在引线键合疲劳模式下更加速的功率循环的更严格条件的规范； -在恶劣的功率循环条件下，薄管芯金属化中的高电流密度可能引发接近引线键合的电迁移效应的信息。

IEC 60749-34:2010 describes a test method used to determine the resistance of a semiconductor device to thermal and mechanical stresses due to cycling the power dissipation of the internal semiconductor die and internal connectors. This happens when low-voltage operating biases for forward conduction (load currents) are periodically applied and removed, causing rapid changes of temperature. The power cycling test is intended to simulate typical applications in power electronics and is complementary to high temperature operating life (see IEC 60749-23). Exposure to this test may not induce the same failure mechanisms as exposure to air-to-air temperature cycling, or to rapid change of temperature using the two-fluid-baths method. This test causes wear-out and is considered destructive. This second edition cancels and replaces the first edition published in 2004 and constitutes a technical revision. The significant changes with respect from the previous edition include:
- the specification of tighter conditions for more accelerated power cycling in the wire bond fatigue mode;
- information that under harsh power cycling conditions high current densities in a thin die metalization might initiate electromigration effects close to wire bonds.