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现行 MIL MIL-M-38510/230A Notice 3-Validation 2
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MICROCIRCUIT, DIGITAL, BIPOLAR 256 BIT RANDOM ACCESS MEMORY (RAM) MONOLITHIC SILICON 双极256位随机存取存储器(RAM)单片硅数字微电路
发布日期: 2006-01-31
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发布单位或类别: 美国-美国军事规范和标准
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研制信息
相似标准/计划/法规
现行
MIL MIL-M-38510/230A Notice 1-Inactivation 1
MICROCIRCUIT, DIGITAL, BIPOLAR 256 BIT RANDOM ACCESS MEMORY (RAM) MONOLITHIC SILICON
双极256位随机存取存储器(RAM)单片硅数字微电路
1995-07-24
现行
MIL MIL-M-38510/230A Notice 2-Validation 1
MICROCIRCUIT, DIGITAL, BIPOLAR 256 BIT RANDOM ACCESS MEMORY (RAM) MONOLITHIC SILICON
双极256位随机存取存储器(RAM)单片硅数字微电路
2001-04-26
现行
MIL MIL-M-38510/230A
MICROCIRCUIT, DIGITAL, BIPOLAR 256 BIT RANDOM ACCESS MEMORY (RAM) MONOLITHIC SILICON (SUPERSEDING MIL-M-38510/230)
微电路、数字、双极性256位随机存取存储器(RAM)单片硅(取代MIL-M-38510/230)
1984-09-04
现行
MIL DSCC 5962-86052C
MICROCIRCUIT, MEMORY, DIGITAL, BIPOLAR 256 X 8-BIT RANDOM ACCESS MEMORY (RAM), MONOLITHIC SILICON(SUPERSEDING DESC 5962-86052A)
微电路、存储器、数字、双极256 X 8位随机存取存储器(RAM)、单片硅(取代DESC 5962-86052A)
2006-05-16
现行
MIL DSCC 86023C
MICROCIRCUIT, MEMORY, DIGITAL, BIPOLAR 256-BIT RAM, MONOLITHIC SILICON(SUPERSEDING DESC 86023A)
微电路、存储器、数字、双极256位RAM、单片硅(取代DESC 86023A)
2005-09-12
现行
MIL DSCC 79018C
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128 X 8-BIT RANDOM ACCESS MEMORY (RAM), MONOLITHIC SILICON(SUPERSEDING DESC 79018A)
微电路、存储器、数字、CMOS 128 X 8位随机存取存储器(RAM)、单片硅(取代DESC 79018A)
2006-03-16
现行
MIL MIL-M-38510/291B
MICROCIRCUITS, DIGITAL, CMOS 16,384 BIT STATIC RANDOM ACCESS MEMORY (RAM) MONOLITHIC SILICON(SUPERSEDING MIL-M-38510/291A)
数字微电路 CMOS 16384位静态随机存取存储器(RAM)单片硅(取代MIL-M-38510/291A)
2006-01-25
现行
MIL MIL-M-38510/289A
MICROCIRCUITS, DIGITAL, CMOS 4096 BIT STATIC RANDOM ACCESS MEMORY (RAM) MONOLITHIC SILICON(SUPERSEDING MIL-M-38510/289)
数字微电路 CMOS 4096位静态随机存取存储器(RAM)单片硅(取代MIL-M-38510/289)
2006-01-23
现行
MIL MIL-M-38510/231B
MICROCIRCUIT, DIGITAL, SCHOTTKY TTL, 1024 BIT RANDOM ACCESS MEMORY (RAM) MONOLITHIC SILICON (SUPERSEDING MIL-M-38510/231A)
肖特基TTL数字微电路 1024位随机存取存储器(RAM)单片硅(取代MIL-M-38510/231A)
1982-04-02
现行
MIL MIL-M-38510/289 Notice 1-Inactivation
MICROCIRCUITS, DIGITAL, CMOS 4096 BIT STATIC RANDOM ACCESS MEMORY (RAM) MONOLITHIC SILICON(S/S BY MIL-M-38510/289A)
数字微型电路 CMOS 4096位静态随机存取存储器(RAM)单片硅(S/S BY MIL-M-38510/289A)
1995-07-24
现行
MIL MIL-M-38510/289 Notice 2-Validation
MICROCIRCUITS, DIGITAL, CMOS 4096 BIT STATIC RANDOM ACCESS MEMORY (RAM) MONOLITHIC SILICON(S/S BY MIL-M-38510/289A)
数字微型电路 CMOS 4096位静态随机存取存储器(RAM)单片硅(S/S BY MIL-M-38510/289A)
2001-05-01
现行
MIL MIL-M-38510/402A Notice 1-Validation
MICROCIRCUITS, DIGITAL, MOS, 1024-BIT STATIC RANDOM ACCESS MEMORY (RAM), MONOLITHIC SILICON (NO S/S DOCUMENT) (SUPERSEDING MIL-M-38510/402)
微型计算机 数字 MOS 1024位静态随机存取存储器(RAM) 单片硅(无S/S文件)(取代MIL-M-38510/402)
1988-11-30
现行
MIL MIL-M-38510/402A Notice 2-Cancellation
MICROCIRCUITS, DIGITAL, MOS, 1024-BIT STATIC RANDOM ACCESS MEMORY (RAM), MONOLITHIC SILICON (NO S/S DOCUMENT) (SUPERSEDING MIL-M-38510/402)
数字微电路 MOS 1024位静态随机存取存储器(RAM) 单片硅(无S/S文件)(取代MIL-M-38510/402)
1996-01-04
现行
MIL MIL-M-38510/471A Notice 1-Cancellation
MICROCIRCUITS, DIGITAL, CMOS/SOS 1024 BIT RANDOM ACCESS MEMORY (RAM) MONOLITHIC SILICON (SUPERSEDING MIL-M-38510/471) (NO S/S DOCUMENT)
数字微型电路 CMOS/SOS 1024位随机存取存储器(RAM)单片硅(取代MIL-M-38510/471)(无S/S文件)
1996-01-04
现行
MIL MIL-M-38510/402A
MICROCIRCUITS, DIGITAL, MOS, 1024-BIT STATIC RANDOM ACCESS MEMORY (RAM), MONOLITHIC SILICON (NO S/S DOCUMENT) (SUPERSEDING MIL-M-38510/402)
微电路、数字、MOS、1024位静态随机存取存储器(RAM)、单片硅(无S/S文件)(取代MIL-M-38510/402)
1983-08-09
现行
MIL MIL-M-38510/471A
MICROCIRCUITS, DIGITAL, CMOS/SOS 1024 BIT RANDOM ACCESS MEMORY (RAM) MONOLITHIC SILICON (SUPERSEDING MIL-M-38510/471) (NO S/S DOCUMENT)
CMOS/SOS 1024位随机存取存储器(RAM)单片硅数字微电路(取代MIL-M-38510/471)(无S/S文件)
1983-09-30
现行
MIL MIL-M-38510/238B
MICROCIRCUITS, DIGITAL, MOS, 096 BIT STATIC RANDOM ACCESS MEMORY (RAM), MONOLITHIC SILICON (SEE BASE FOR INACTIVATION NOTICE) (SUPERSEDING MIL-M-38510/238A)
单片硅096位静态随机存取存储器(RAM)数字MOS微电路(失活注意事项见基础)(取代MIL-M-38510/238A)
2003-12-16
现行
MIL MIL-M-38510/291A Notice 1-Inactivation
MICROCIRCUITS, DIGITAL, CMOS 16,384-BIT STATIC RANDOM ACCESS MEMORY (RAM) MONOLITHIC SILICON (SUPERSEDING MIL-M-38510/291)(S/S BY MIL-M-38510/291B)
数字微电路 CMOS 16384位静态随机存取存储器(RAM)单片硅(取代MIL-M-38510/291)(S/S被MIL-M-38510/291B取代)
1995-07-28
现行
MIL MIL-M-38510/291A Notice 2-Validation
MICROCIRCUITS, DIGITAL, CMOS 16,384-BIT STATIC RANDOM ACCESS MEMORY (RAM) MONOLITHIC SILICON (SUPERSEDING MIL-M-38510/291)(S/S BY MIL-M-38510/291B)
数字微电路 CMOS 16384位静态随机存取存储器(RAM)单片硅(取代MIL-M-38510/291)
2001-05-01
现行
MIL MIL-M-38510/238A Notice 2-Validation
MICROCIRCUITS, DIGITAL, MOS, 4096 BIT STATIC RANDOM ACCESS MEMORY (RAM), MONOLITHIC SILICON (SUPERSEDING MIL-M-38510/238) (S/S BY MIL-M-38510/238B)
数字微电路 MOS 4096位静态随机存取存储器(RAM) 单片硅(取代MIL-M-38510/238)
2001-04-26