MIL DSCC 5962-88734C-微电路、存储器、数字、CMOS、2K X 8位、一次性可编程（OTP）PROM、单片硅（取代DSCC 5962-88734B）-国家数字标准馆

现行

MIL DSCC 5962-88735E

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 8 BIT, ONE TIME PROGRAMMABLE (OTP) REGISTERED PROM, MONOLITHIC SILICON(SUPERSEDING DSCC 5962-88735D)
微电路、存储器、数字、CMOS、2K X 8位、一次性可编程（OTP）注册PROM、单片硅（取代DSCC 5962-88735D）

2006-06-06

现行

MIL DSCC 5962-95708D

MICROCIRCUIT, MEMORY, DIGITAL, RADIATION HARDENED, CMOS, 2K X 8-BIT PROM, MONOLITHIC SILICON (SUPERSEDING DSCC 5962-95708C)
微电路、存储器、数字、抗辐射、CMOS、2K X 8位PROM、单片硅（取代DSCC 5962-95708C）

1999-06-11

现行

MIL MIL-M-38510/261 Notice 1-Inactivation 1

MICROCIRCUITS, MEMORY, DIGITAL, CMOS 32K X 8-BIT, ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY (EEPROM), MONOLITHIC SILICON
微型电路存储器数字 CMOS 32K X 8位电可擦除可编程只读存储器（EEPROM）单片硅

1995-07-24

现行

MIL MIL-M-38510/261 Notice 3-Validation 2

MICROCIRCUITS, MEMORY, DIGITAL, CMOS 32K X 8-BIT, ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY (EEPROM), MONOLITHIC SILICON
微型电路存储器数字 CMOS 32K X 8位电可擦除可编程只读存储器（EEPROM）单片硅

2006-02-06

现行

MIL MIL-M-38510/260 Notice 3-Validation 2

MICROCIRCUITS, MEMORY, DIGITAL, CMOS 8K X 8 BIT, ELECTRICALLY ERASABLE, PROGRAMMABLE READ-ONLY MEMORY (EEPROM) MONOLITHIC SILICON
微型电路存储器数字 CMOS 8K X 8位电可擦除可编程只读存储器（EEPROM）单片硅

2006-02-06

现行

MIL MIL-M-38510/261 Notice 2-Validation 1

MICROCIRCUITS, MEMORY, DIGITAL, CMOS 32K X 8-BIT, ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY (EEPROM), MONOLITHIC SILICON
微型电路存储器数字 CMOS 32K X 8位电可擦除可编程只读存储器（EEPROM）单片硅

2001-05-01

现行

MIL MIL-M-38510/260 Notice 2-Validation 1

MICROCIRCUITS, MEMORY, DIGITAL, CMOS 8K X 8 BIT, ELECTRICALLY ERASABLE, PROGRAMMABLE READ-ONLY MEMORY (EEPROM) MONOLITHIC SILICON
微型电路存储器数字 CMOS 8K X 8位电可擦除可编程只读存储器（EEPROM）单片硅

2001-05-01

现行

MIL MIL-M-38510/260

MICROCIRCUITS, MEMORY, DIGITAL, CMOS 8K X 8 BIT, ELECTRICALLY ERASABLE, PROGRAMMABLE READ-ONLY MEMORY (EEPROM) MONOLITHIC SILICON
微电路、存储器、数字、CMOS 8K X 8位、电可擦除、可编程只读存储器（EEPROM）单片硅

1989-01-06

现行

MIL MIL-M-38510/261

MICROCIRCUITS, MEMORY, DIGITAL, CMOS 32K X 8-BIT, ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY (EEPROM), MONOLITHIC SILICON
微电路、存储器、数字、CMOS 32K X 8位、电可擦除可编程只读存储器（EEPROM）、单片硅

1989-03-27

现行

MIL DESC 5962-97517

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, RADIATION - HARDENED, 32K X 8-BIT MASK PROGRAMMABLE ROM, MONOLITHIC SILICON
微电路、存储器、数字、CMOS、抗辐射、32K X 8位掩模可编程ROM、单片硅

1997-05-30

现行

MIL DESC 5962-97544

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, RADIATION- HARDENED, 8K X 8-BIT MASK PROGRAMMABLE ROM, MONOLITHIC SILICON
微电路、存储器、数字、CMOS、抗辐射、8K X 8位掩模可编程ROM、单片硅

1997-10-16

现行

MIL DSCC 5962-98644A

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, SOI, RADIATION- HARDENED, 32K X 8-BIT MASK PROGRAMMABLE ROM, MONOLITHIC SILICON(SUPERSEDING DSCC 5962-98644)
微电路、存储器、数字、CMOS、SOI、抗辐射、32K X 8位掩模可编程ROM、单片硅（取代DSCC 5962-98644）

2006-01-13