首页 馆藏资源 舆情信息 标准服务 科研活动 关于我们
历史 ASTM F980-16
到馆提醒
收藏跟踪
购买正版
Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices 硅半导体器件中子诱发位移损伤快速退火的标准指南
发布日期: 2016-12-01
1.1 本指南定义了测试硅分立半导体器件和集成电路因中子辐射引起的位移损伤而产生的快速退火效应的要求和程序。该试验将导致辐照设备的电气性能下降,应视为破坏性试验。位移损伤的快速退火通常与双极技术有关。 1.1.1 重离子束也可用于表征位移损伤退火 ( 1. ) 2. 但是,由于相关的电离剂量,离子束在解释产生的器件行为时有很大的复杂性。使用脉冲离子束作为位移损伤源不在本标准范围内。 1.2 以国际单位制表示的数值应视为标准值。本标准不包括其他计量单位。 1.3 本标准并非旨在解决与其使用相关的所有安全问题(如有)。 本标准的用户有责任在使用前咨询并建立适当的安全和健康实践,并确定监管限制的适用性。 ====意义和用途====== 5.1 许多空间、军事和核动力系统中使用的电子电路可能暴露于不同水平和时间剖面的中子辐射。对于此类电路的设计和制造而言,必须有可用的测试方法,以确定其中使用的组件的脆弱性或硬度(生存能力的测量)。 短期内通常需要测定硬度( ≈ 100μs)以及暴露后的长期(永久性损伤)。参见练习 E722 .
1.1 This guide defines the requirements and procedures for testing silicon discrete semiconductor devices and integrated circuits for rapid-annealing effects from displacement damage resulting from neutron radiation. This test will produce degradation of the electrical properties of the irradiated devices and should be considered a destructive test. Rapid annealing of displacement damage is usually associated with bipolar technologies. 1.1.1 Heavy ion beams can also be used to characterize displacement damage annealing ( 1 ) 2 , but ion beams have significant complications in the interpretation of the resulting device behavior due to the associated ionizing dose. The use of pulsed ion beams as a source of displacement damage is not within the scope of this standard. 1.2 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard. 1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to consult and establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. ====== Significance And Use ====== 5.1 Electronic circuits used in many space, military, and nuclear power systems may be exposed to various levels and time profiles of neutron radiation. It is essential for the design and fabrication of such circuits that test methods be available that can determine the vulnerability or hardness (measure of survivability) of components to be used in them. A determination of hardness is often necessary for the short term ( ≈ 100 μs) as well as long term (permanent damage) following exposure. See Practice E722 .
分类信息
关联关系
研制信息
归口单位: E10.07
相似标准/计划/法规