Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
金属氧化物、半导体、场效应晶体管（MOSFET）的偏压温度稳定性试验

2006-09-29

Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET
半导体器件.金属氧化物半导体场效应晶体管（MOSFET）的偏压温度稳定性试验.第1部分:MOSFET的快速BTI试验

2020-07-15

Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006); German version EN 62373:2006
金属氧化物、半导体、场效应晶体管（MOSFET）的偏压温度稳定性试验（IEC 62373-2006）；德文版EN 62373:2006

2007-01-01

Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability
半导体器件碳化硅分立金属氧化物半导体场效应晶体管可靠性试验方法第1部分:偏置温度不稳定性试验方法

2022-04-21