IEC 63275-1:2022给出了一种在高温下施加连续正栅极源电压应力后，使用室温读数评估碳化硅功率金属氧化物半导体场效应晶体管（MOSFET）栅极阈值电压漂移的测试方法。该方法允许应力和测量之间存在较大的延迟时间（长达10小时），从而可以接受一定量的恢复。

IEC 63275-1:2022 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room temperature readout after applying continuous positive gate-source voltage stress at elevated temperature. The proposed method accepts a certain amount of recovery by allowing large delay times between stress and measurement (up to 10 h).