本文件描述了使用电子背散射衍射（EBSD）测量二维抛光横截面的平均晶粒尺寸的程序。这需要测量取向、错取向和图案质量因子，作为晶体样品中位置的函数[1]。本文件中的测量是在二维截面上进行的。读者应仔细注意所使用的定义（3.3），该定义区分了测量的截面晶粒度和可从中得出的与三维晶粒度相关的平均晶粒度。购买本文件时可获得的所有当前修订均包含在购买本文件中。

This document describes procedures for measuring average grain size derived from a two-dimensional polished cross-section using electron backscatter diffraction (EBSD). This requires the measurement of orientation, misorientation and pattern quality factor as a function of position in the crystalline specimen[1]. The measurements in this document are made on two dimensional sections. The reader should note carefully the definitions used (3.3) which draw a distinction between the measured sectional grain sizes, and the mean grain size which can be derived from them that relates to the three dimensional grain size.All current amendments available at time of purchase are included with the purchase of this document.