现行

MIL MIL-S-19500/579 Notice 1-Cancellation

SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT DMOS, QUAD N-CHANNEL TYPES 2N7116, 2N7117, AND 2N7118, JANTX, JANTXV, AND JANS (NO S/S DOCUMENT)
半导体器件、晶体管、场效应DMO、四N沟道类型2N7116、2N7117和2N7118、JANTX、JANTXV和JANS（无S/S文件）

1999-06-25

现行

MIL DESC 89026A

SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON (SUPERSEDING DESC 89026)
半导体器件 场效应晶体管 N沟道 硅（取代DESC 89026）

1992-12-11

现行

MIL MIL-PRF-19500/739A

Semiconductor Device, Field Effect Radiation Hardened Quad Transistor, N-Channel and P-Channel, Silicon, Types 2N7518 and 2N7518U, JANTXVR, F, and JANSR, F
半导体器件 场效应抗辐射四晶体管 N沟道和P沟道 硅 2N7518和2N7518U型 JANTXVR F和JANSR F

2013-07-01

现行

MIL MIL-S-19500/598 Amendment 4

SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTOR, P-CHANNEL, AND N-CHANNEL, SILICON TYPE 2N7336, JANTX, JANTXV, AND JANS (S/S BY MIL-PRF-19500/598A)
半导体器件 四路 场效应晶体管 P沟道和N沟道 硅类型2N7336 JANTX JANTXV和JANS（S/S由MIL-PRF-19500/598A提供）

1994-12-16

现行

MIL DSCC 89007A Notice B-Cancellation

SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON(NO S/S DOCUMENT)(SUPERSEDING DESC 89007)
半导体器件 场效应晶体管 N沟道 硅（无S/S文件）（代替DESC 89007）

2000-09-22

现行

MIL DESC 89009A Notice B-Cancellation

SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON(NO S/S DOCUMENT)(SUPERSEDING DESC 89009)
半导体器件 场效应晶体管 N沟道 硅（无S/S文件）（代替DESC 89009）

2000-09-22

现行

MIL MIL-PRF-19500/696B

Semiconductor Device, Field Effect Transistor, Plastic, N-Channel, Silicon, Type 2N7537, 2N7537A, JAN and JANTX
半导体器件 场效应晶体管 塑料 N沟道 硅 2N7537 2N7537A JAN和JANTX型

2017-06-27

现行

MIL MIL-PRF-19500/696A Notice 1-Validation

Semiconductor Device, Field Effect Transistor, Plastic, N-Channel, Silicon, Type 2N7537, 2N7537A, JAN and JANTX
半导体器件 场效应晶体管 塑料 N沟道 硅 2N7537 2N7537A JAN和JANTX型

2013-12-06

现行

MIL MIL-PRF-19500/607B Notice 1-Validation

Semiconductor Device, Field Effect Transistors, N-Channel and P-Channel, Silicon, Type 2N7337 JAN, JANTX, JANTXV, JANS, and JANHC
半导体器件 场效应晶体管 N沟道和P沟道 硅 2N7337 JAN、JANTX、JANTSV、JANS和JANHC型

2011-07-14

现行

MIL MIL-PRF-19500/607B Notice 2-Validation

Semiconductor Device, Field Effect Transistors, N-Channel and P-Channel, Silicon, Type 2N7337 JAN, JANTX, JANTXV, JANS, and JANHC
半导体器件 场效应晶体管 N沟道和P沟道 硅 2N7337 JAN、JANTX、JANTSV、JANS和JANHC型

2016-05-24

现行

MIL MIL-PRF-19500/740 Notice 2-Validation 1

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) QUAD TRANSISTOR, N-CHANNEL AND P-CHANNEL, SILICON TYPES 2N7521U, 2N7522U, 2N7525, AND 2N7526, JANTXVR AND F AND JANSR
半导体器件 场效应辐射硬化（总剂量和单事件效应）四晶体管 N沟道和P沟道 硅类型2N7521U、2N7522U、2n7515和2N7526 JANTXVR和F以及JANSR

2017-04-25

现行

SJ 20061-1992

半导体分立器件 ＣＳ１４６型硅Ｎ沟道耗尽型场效应晶体管详细规范
Semiconductor discrete device--Detail specification for silicon N-channel deplition mode field-effect transistor of Type CS146

1992-11-19

现行

MIL MIL-PRF-19500/547F

Semiconductor Device, Field Effect Transistor, N-Channel, Silicon, Types 2N6660 and 2N6661, JAN, JANTX, JANTXV, and JANS
半导体器件 场效应晶体管 N沟道 硅 2N6660和2N6661型 JAN JANTX JANTXV和JANS

2020-06-30

现行

MIL MIL-PRF-19500/428H

Semiconductor Device, Field-Effect Transistor, N-Channel Silicon, Type 2N4416A and 2N4416AUB, JAN, JANTX, JANTXV, and JANS
半导体器件 场效应晶体管 N沟道硅 2N4416A和2N4416AUB型 JAN JANTX JANTXV和JANS

2011-08-08

现行

MIL MIL-PRF-19500/547F Amendment 1

Semiconductor Device, Field Effect Transistor, N-Channel, Silicon, Types 2N6660 and 2N6661, JAN, JANTX, JANTXV, and JANS
半导体器件 场效应晶体管 N沟道 硅 2N6660和2N6661型 JAN JANTX JANTSV和JANS

2020-09-04

现行

MIL MIL-PRF-19500/547D Notice 1-Validation 1

Semiconductor Device, Field Effect Transistor, N-Channel, Silicon, Types 2N6660 and 2N6661, JAN, JANTX, JANTXV, and JANS
半导体器件 场效应晶体管 N沟道 硅 2N6660和2N6661型 JAN JANTX JANTSV和JANS

2016-07-05

现行

MIL MIL-PRF-19500/428G Notice 1-Validation

Semiconductor Device, Field-Effect Transistor, N-Channel Silicon, Type 2N4416A and 2N4416AUB, JAN, JANTX, JANTXV, and JANS
半导体器件 场效应晶体管 N沟道硅 2N4416A和2N4416AUB型 JAN JANTX JANTSV和JANS

2011-07-01

现行

MIL MIL-PRF-19500/428H Notice 1-Validation

Semiconductor Device, Field-Effect Transistor, N-Channel Silicon, Type 2N4416A and 2N4416AUB, JAN, JANTX, JANTXV, and JANS
半导体器件 场效应晶体管 N沟道硅 2N4416A和2N4416AUB型 JAN JANTX JANTSV和JANS

2016-05-24

现行

MIL MIL-PRF-19500/740

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) QUAD TRANSISTOR, N-CHANNEL AND P-CHANNEL, SILICON TYPES 2N7521U, 2N7522U, 2N7525, AND 2N7526, JANTXVR AND F AND JANSR AND F
半导体器件 场效应抗辐射（总剂量和单粒子效应）四晶体管 N沟道和P沟道 硅类型2N7521U、2N7522U、2N7525和2N7526 JANTXVR和F以及JANSR和F

2005-12-13

现行

MIL MIL-PRF-19500/740 Amendment 1(amendment incorporated)

Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Quad Transistor, N-Channel and P-Channel, Silicon Types 2N7521U, 2N7522U, 2N7525, AND 2N7526, JANTXVR and F and JANSR and F
半导体器件 场效应辐射硬化（总剂量和单事件效应）四晶体管 N沟道和P沟道 硅类型2N7521U、2N7522U、2N7515、and 2N7526、JANTVR和F以及JANSR和F

2012-06-15