MIL MIL-PRF-19500/739A-半导体器件场效应抗辐射四晶体管 N沟道和P沟道硅 2N7518和2N7518U型 JANTXVR F和JANSR F-国家数字标准馆

现行 MIL MIL-PRF-19500/739A

到馆提醒

收藏跟踪

购买正版

Semiconductor Device, Field Effect Radiation Hardened Quad Transistor, N-Channel and P-Channel, Silicon, Types 2N7518 and 2N7518U, JANTXVR, F, and JANSR, F 半导体器件场效应抗辐射四晶体管 N沟道和P沟道硅 2N7518和2N7518U型 JANTXVR F和JANSR F

发布日期： 2013-07-01

本规范涵盖了四通道N通道和P通道、增强模式、MOSFET、抗辐射、功率晶体管的性能要求。MIL-PRF-19500中规定的每种设备类型都有两级产品保证，即雪崩能量最大额定值（EAS）和最大雪崩电流（IAS）。

This specification covers the performance requirements for quad N-channel and P-channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS).

分类信息

发布单位或类别：美国-美国军事规范和标准

关联关系

研制信息

相似标准/计划/法规

MIL MIL-PRF-19500/659A

Semiconductor Device, Field Effect Radiation Hardened Transistor, P-Channel Silicon Type 2N7440, and 2N7441 JANSD and JANSR
半导体器件场效应抗辐射晶体管 P沟道硅型2N7440 以及2N7441 JANSD和JANSR

MIL MIL-PRF-19500/633E

Semiconductor Device, Field Effect Radiation Hardened Transistors, P-Channel Silicon, Types 2N7403 and 2N7404, JANSD and JANSR
半导体器件场效应抗辐射晶体管 P沟道硅 2N7403和2N7404型 JANSD和JANSR

MIL MIL-PRF-19500/659A Notice 1-Validation 1

Semiconductor Device, Field Effect Radiation Hardened Transistor, P-Channel Silicon Type 2N7440, and 2N7441 JANSD and JANSR
半导体器件场效应辐射硬化晶体管 P沟道硅型2N7440和2N7441 JANSD和JANSR

MIL MIL-PRF-19500/633D Notice 1-Validation 1

Semiconductor Device, Field Effect Radiation Hardened Transistors, P-Channel Silicon, Types 2N7403 and 2N7404, JANSD and JANSR
半导体器件场效应辐射硬化晶体管 P沟道硅 2N7403和2N7404型 JANSD和JANSR

MIL MIL-PRF-19500/659 Notice 2-Validation

Semiconductor Device, Field Effect Radiation Hardened Transistor, P-Channel Silicon Type 2N7440, and 2N7441 JANSD and JANSR
半导体器件场效应辐射硬化晶体管 P沟道硅型2N7440和2N7441 JANSD和JANSR

MIL MIL-PRF-19500/657C

Semiconductor Device, Field Effect, Radiation Hardened, Transistor Die, N and P-Channel, Silicon Various Types JANHC and JANKC
半导体器件场效应抗辐射晶体管管芯 N沟道和P沟道硅各种类型的JANHC和JANKC

MIL MIL-PRF-19500/657B Notice 1-Validation 1

Semiconductor Device, Field Effect, Radiation Hardened, Transistor Die, N and P-Channel, Silicon Various Types JANHC and JANKC
半导体器件场效应辐射硬化晶体管管芯 N和P沟道各种类型的硅JANHC和JANKC

MIL MIL-PRF-19500/638B Notice 2-Validation

Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel Silicon, Type 2N7410, JANSD and JANSR
半导体器件场效应辐射硬化（总剂量和单一事件效应）晶体管 N沟道硅 2N7410 Jansd和Jansr

MIL MIL-PRF-19500/639A Notice 2-Validation

Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects)Transistor, P-Channel Silicon Type 2N7411 JANSD and JANSR
半导体器件场效应辐射硬化（总剂量和单事件效应）晶体管 P沟道硅2N7411型JANSD和JANSR

MIL MIL-PRF-19500/639A Notice 3-Validation

Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects)Transistor, P-Channel Silicon Type 2N7411 JANSD and JANSR
半导体器件场效应辐射硬化（总剂量和单事件效应）晶体管 P沟道硅2N7411型JANSD和JANSR

MIL MIL-PRF-19500/740 Notice 2-Validation 1

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) QUAD TRANSISTOR, N-CHANNEL AND P-CHANNEL, SILICON TYPES 2N7521U, 2N7522U, 2N7525, AND 2N7526, JANTXVR AND F AND JANSR
半导体器件场效应辐射硬化（总剂量和单事件效应）四晶体管 N沟道和P沟道硅类型2N7521U、2N7522U、2n7515和2N7526 JANTXVR和F以及JANSR

MIL MIL-PRF-19500/704F

Semiconductor Device, Field Effect Radiation Hardened Transistor, N-Channel, Silicon, Types 2N7485U3, 2N7486U3, 2N7487U3, and 2N7555U3 JANTXVR and JANSR
半导体器件场效应抗辐射晶体管 N沟道硅 2N7485U3 2N7486U3 2N7487U3和2N7555U3型JANTXVR和JANSR

MIL MIL-PRF-19500/634E

Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel Silicon, Types 2N7405, 2N7406, 2N7407, and 2N7408, JANSD and JANSR
半导体器件场效应抗辐射晶体管 N沟道硅 2N7405、2N7406、2N7407和2N7408型 JANSD和JANSR

MIL MIL-PRF-19500/632D

Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel Silicon, Types 2N7399, 2N7400, 2N7401, and 2N7402, JANSD and R
半导体器件场效应抗辐射晶体管 N沟道硅 2N7399、2N7400、2N7401和2N7402型 JANSD和R

MIL MIL-PRF-19500/676G

Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel, Silicon, Types 2N7465T3 and 2N7466T3 and U3 Suffixes, JANTXVR and JANSR
半导体器件场效应抗辐射晶体管 N沟道硅 2N7465T3和2N7466T3型 U3后缀 JANTXVR和JANSR

MIL MIL-PRF-19500/675F

Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel, Silicon Types 2N7463T2, 2N7464T2, 2N7463U5 and 2N7464U5 JANTXVR and JANSR
半导体器件场效应抗辐射晶体管 N沟道硅类型2N7463T2 2N7464T2 2N7463U5和2N7464U5 JANTXVR和JANSR

MIL MIL-PRF-19500/704B Amendment 1(amendment incorporated)

Semiconductor Device, Field Effect Radiation Hardened Transistor, N-Channel, Silicon, Types 2N7485U3, 2N7486U3, 2N7487U3, and 2N7555U3 JANTXVR and JANSR
半导体器件场效应抗辐射晶体管 N沟道硅 2N7485U3 2N7486U3 2N7487U3和2N7555U3型JANTXVR和JANSR

MIL MIL-PRF-19500/704F Amendment 1

Semiconductor Device, Field Effect Radiation Hardened Transistor, N-Channel, Silicon, Types 2N7485U3, 2N7486U3, 2N7487U3, and 2N7555U3 JANTXVR and JANSR
半导体器件场效应辐射硬化晶体管 N沟道硅 2N7485U3、2N7486U3、2N7487U3和2N7555U3型JANTXVR和JANSR

MIL MIL-PRF-19500/675F Amendment 2

Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel, Silicon Types 2N7463T2, 2N7464T2, 2N7463U5 and 2N7464U5 JANTXVR and JANSR
半导体器件场效应辐射硬化晶体管 N沟道硅类型2N7463T2 2N7464T2 2N7423U5和2N7464U5 JANTXVR和JANSR

MIL MIL-PRF-19500/632C Notice 1-Validation 1

Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel Silicon, Types 2N7399, 2N7400, 2N7401, and 2N7402, JANSD and R
半导体器件场效应辐射硬化晶体管 N沟道硅 2N7399、2N7400、2N7401和2N7402型 JANSD和R

《国家标准化发展纲要》提出建设国家数字标准馆，推动标准化工作向数字化、网络化、智能化转型。中国标准化研究院正在全力推进国家数字标准馆建设，力争在2026年底建成“一个中心”和“一个平台”，即全球领先的标准数据资源中心，涵盖标准全生命周期的数字化、网络化、智能化研究与服务平台。

专题数据库

标准管理系统

大数据分析系统

标准智能研制系统