现行

MIL MIL-PRF-19500/657B Notice 1-Validation 1

Semiconductor Device, Field Effect, Radiation Hardened, Transistor Die, N and P-Channel, Silicon Various Types JANHC and JANKC
半导体器件 场效应 辐射硬化 晶体管管芯 N和P沟道 各种类型的硅JANHC和JANKC

2015-12-09

现行

MIL MIL-PRF-19500/657C

Semiconductor Device, Field Effect, Radiation Hardened, Transistor Die, N and P-Channel, Silicon Various Types JANHC and JANKC
半导体器件 场效应 抗辐射 晶体管管芯 N沟道和P沟道 硅各种类型的JANHC和JANKC

2020-03-10

现行

MIL MIL-PRF-19500/632B Notice 1-Validation

Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel Silicon, Types 2N7399, 2N7400, 2N7401, and 2N7402, JANSD and R
半导体器件 场效应辐射硬化晶体管 N沟道硅 2N7399、2N7400、2N7401和2N7402型 JANSD和R

2011-07-15

现行

MIL MIL-PRF-19500/704F Amendment 1

Semiconductor Device, Field Effect Radiation Hardened Transistor, N-Channel, Silicon, Types 2N7485U3, 2N7486U3, 2N7487U3, and 2N7555U3 JANTXVR and JANSR
半导体器件 场效应辐射硬化晶体管 N沟道 硅 2N7485U3、2N7486U3、2N7487U3和2N7555U3型JANTXVR和JANSR

2019-07-17

现行

MIL MIL-PRF-19500/675F Amendment 2

Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel, Silicon Types 2N7463T2, 2N7464T2, 2N7463U5 and 2N7464U5 JANTXVR and JANSR
半导体器件 场效应辐射硬化晶体管 N沟道 硅类型2N7463T2 2N7464T2 2N7423U5和2N7464U5 JANTXVR和JANSR

2019-12-12

现行

MIL MIL-PRF-19500/632C Notice 1-Validation 1

Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel Silicon, Types 2N7399, 2N7400, 2N7401, and 2N7402, JANSD and R
半导体器件 场效应辐射硬化晶体管 N沟道硅 2N7399、2N7400、2N7401和2N7402型 JANSD和R

2019-02-26

现行

MIL MIL-PRF-19500/675F Amendment 1

Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel, Silicon Types 2N7463T2, 2N7464T2, 2N7463U5 and 2N7464U5 JANTXVR and JANSR
半导体器件 场效应辐射硬化晶体管 N沟道 硅类型2N7463T2 2N7464T2 2N7423U5和2N7464U5 JANTXVR和JANSR

2018-11-26

现行

MIL MIL-PRF-19500/634D Notice 1-Validation 1

Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel Silicon, Types 2N7405, 2N7406, 2N7407, and 2N7408, JANSD and JANSR
半导体器件 场效应辐射硬化晶体管 N沟道硅 2N7405、2N7406、2N7407和2N7408型 JANSD和JANSR

2018-11-07

现行

MIL MIL-PRF-19500/704B Amendment 1(amendment incorporated)

Semiconductor Device, Field Effect Radiation Hardened Transistor, N-Channel, Silicon, Types 2N7485U3, 2N7486U3, 2N7487U3, and 2N7555U3 JANTXVR and JANSR
半导体器件 场效应抗辐射晶体管 N沟道 硅 2N7485U3 2N7486U3 2N7487U3和2N7555U3型JANTXVR和JANSR

2010-01-20

现行

MIL MIL-PRF-19500/634E

Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel Silicon, Types 2N7405, 2N7406, 2N7407, and 2N7408, JANSD and JANSR
半导体器件 场效应抗辐射晶体管 N沟道硅 2N7405、2N7406、2N7407和2N7408型 JANSD和JANSR

2019-10-29

现行

MIL MIL-PRF-19500/632D

Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel Silicon, Types 2N7399, 2N7400, 2N7401, and 2N7402, JANSD and R
半导体器件 场效应抗辐射晶体管 N沟道硅 2N7399、2N7400、2N7401和2N7402型 JANSD和R

2019-10-27

现行

MIL MIL-PRF-19500/704F

Semiconductor Device, Field Effect Radiation Hardened Transistor, N-Channel, Silicon, Types 2N7485U3, 2N7486U3, 2N7487U3, and 2N7555U3 JANTXVR and JANSR
半导体器件 场效应抗辐射晶体管 N沟道 硅 2N7485U3 2N7486U3 2N7487U3和2N7555U3型JANTXVR和JANSR

2014-09-12

现行

MIL MIL-PRF-19500/676G

Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel, Silicon, Types 2N7465T3 and 2N7466T3 and U3 Suffixes, JANTXVR and JANSR
半导体器件 场效应抗辐射晶体管 N沟道 硅 2N7465T3和2N7466T3型 U3后缀 JANTXVR和JANSR

2018-06-07

现行

MIL MIL-PRF-19500/638B Notice 2-Validation

Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel Silicon, Type 2N7410, JANSD and JANSR
半导体器件 场效应辐射硬化（总剂量和单一事件效应）晶体管 N沟道硅 2N7410 Jansd和Jansr

2016-05-24

现行

MIL MIL-PRF-19500/758A Amendment 1

Transistor, Field Effect, Radiation Hardened N-Channel, Silicon, Device Types 2N7609U8 and 2N7609U8C, JANTXV and JANS
晶体管 场效应 辐射硬化N沟道 硅 器件类型2N7609U8和2N7609U7C JANTSV和JANS

2017-07-28

现行

MIL MIL-PRF-19500/758A

Transistor, Field Effect, Radiation Hardened N-Channel, Silicon, Device Types 2N7609U8 and 2N7609U8C, JANTXV and JANS
晶体管 场效应 抗辐射N沟道 硅 设备类型2N7609U8和2N7609U8C JANTXV和JANS

2015-03-25

现行

MIL MIL-PRF-19500/689 Notice 2-Validation

Semiconductor Device, Field Effect Radiation Hardened Transistor, N-Channel Silicon Types 2N7512, 2N7513, and 2N7514 JANTXVD, R and JANSD, R
半导体器件 场效应辐射硬化晶体管 N沟道硅2N7512、2N7513和2N7514型JANTVD R和JANSD R

2011-07-15

现行

MIL MIL-PRF-19500/689A

Semiconductor Device, Field Effect Radiation Hardened Transistor, N-Channel Silicon Types 2N7512, 2N7513, and 2N7514 JANTXVD, R and JANSD, R
半导体器件 场效应抗辐射晶体管 N沟道硅类型2N7512、2N7513和2N7514 JANTXVD R和JANSD R

2014-04-18

现行

MIL MIL-PRF-19500/707 Notice 1-Validation

SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED(TOTAL DOSE & SINGLE EVENT EFFECTS)TRANSISTOR N-CHANNEL SILICON TYPE 2N7500U5 2N7501U5 2N7502U5 JANTXVR JANSR
半导体器件场效应辐射硬化（总剂量和单事件效应）晶体管N沟道硅型2N7500U5 2N7501U5 2n750 2u5 JANTXVR JANSR

2007-04-11

现行

MIL MIL-PRF-19500/684H Amendment 2

SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), TYPES 2N7472U2, 2N7473U2, AND 2N7474U2, JANTXVR AND JANSR
半导体器件 晶体管 场效应 硅 N沟道 辐射硬化（总剂量和单事件效应） 类型2N7472U2 2N7473U2和2N7474U2 JANTXVR和JANSR

2020-01-31