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现行 MIL MIL-PRF-19500/758A Amendment 1
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Transistor, Field Effect, Radiation Hardened N-Channel, Silicon, Device Types 2N7609U8 and 2N7609U8C, JANTXV and JANS 晶体管 场效应 辐射硬化N沟道 硅 器件类型2N7609U8和2N7609U7C JANTSV和JANS
发布日期: 2017-07-28
本规范涵盖了N沟道、增强模式、MOSFET、辐射硬化(总剂量和单事件效应(SEE))、功率晶体管的性能要求。按照MIL-PRF-19500的规定,为每种设备类型提供了两个级别的产品保证(JANTSV和JANS),具有雪崩能量最大额定值(EAS)和最大雪崩电流(IAS),用于特定的电源开关应用。关于JANHC和JANKC模具版本,请参见6.7。
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS) for use in particular power-switching applications. See 6.7 for JANHC and JANKC die versions.
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发布单位或类别: 美国-美国军事规范和标准
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