MIL MIL-PRF-19500/705E-晶体管场效应抗辐射 N沟道硅器件类型2N7488T3 2N7489T3和2N7490T3 JANTXVR和JANSR-国家数字标准馆

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Transistor, Field Effect Radiation Hardened, N-Channel, Silicon Device Types 2N7488T3, 2N7489T3, and 2N7490T3, JANTXVR and JANSR 晶体管场效应抗辐射 N沟道硅器件类型2N7488T3 2N7489T3和2N7490T3 JANTXVR和JANSR

发布日期： 2014-11-24

本规范涵盖了N沟道、增强模式、MOSFET、抗辐射（总剂量和单事件效应（参见））功率晶体管的性能要求。按照MIL-PRF-19500的规定，每种封装器件类型都有两级产品保证，具有雪崩能量最大额定值（EAS）和最大雪崩电流（IAS），用于特定的电源开关应用。

This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE), power transistor Two levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS) for use in particular power-switching applications.

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发布单位或类别：美国-美国军事规范和标准

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