MIL MIL-PRF-19500/632B Notice 1-Validation-半导体器件场效应辐射硬化晶体管 N沟道硅 2N7399、2N7400、2N7401和2N7402型 JANSD和R-国家数字标准馆

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Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel Silicon, Types 2N7399, 2N7400, 2N7401, and 2N7402, JANSD and R 半导体器件场效应辐射硬化晶体管 N沟道硅 2N7399、2N7400、2N7401和2N7402型 JANSD和R

发布日期： 2011-07-15

本规范涵盖了N沟道、增强模式、MOSFET、辐射硬化（总剂量和单事件表征）、功率晶体管的性能要求。按照MIL-PRF-19500的规定，为每种设备类型提供一级产品保证。

This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event characterization), power transistor. One level of product assurance is provided for each device type as specified in MIL-PRF-19500.

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发布单位或类别：美国-美国军事规范和标准

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