MIL MIL-PRF-19500/704B Amendment 1(amendment incorporated)-半导体器件场效应抗辐射晶体管 N沟道硅 2N7485U3 2N7486U3 2N7487U3和2N7555U3型JANTXVR和JANSR-国家数字标准馆

现行 MIL MIL-PRF-19500/704B Amendment 1(amendment incorporated)

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Semiconductor Device, Field Effect Radiation Hardened Transistor, N-Channel, Silicon, Types 2N7485U3, 2N7486U3, 2N7487U3, and 2N7555U3 JANTXVR and JANSR 半导体器件场效应抗辐射晶体管 N沟道硅 2N7485U3 2N7486U3 2N7487U3和2N7555U3型JANTXVR和JANSR

发布日期： 2010-01-20

本规范涵盖了N沟道增强型MOSFET抗辐射功率晶体管的性能要求。MIL-PRF-19500中规定的每种设备类型都有两级产品保证，即雪崩能量最大额定值（EAS）和最大雪崩电流（IAS）。JANHC和JANKC模具版本见6.5。

This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions.

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发布单位或类别：美国-美国军事规范和标准

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