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Semiconductor devices - Discrete devices - Part 8: Field-effect transistors 半导体器件分立器件第8部分:场效应晶体管
发布日期: 2021-06-25
IEC 60747-8:20 0+A1:2021给出了以下类别场效应晶体管的标准: -A型:结栅型; -B型:绝缘栅耗尽(常通)型; -C型:绝缘栅增强型(常闭型)。 下面列出了与上一版相比的主要变化。 a)将“第3条分类”移至第1条。 b)将“第4条术语和字母符号”分为“第3条术语和定义”,并对“第4条字母符号”进行增删修改。 c)对第5、6及7条作了必要的增删。 本出版物应与IEC 60747-1:20 06一起阅读。
IEC 60747-8:2010+A1:2021 gives standards for the following categories of field-effect transistors:
- type A: junction-gate type;
- type B: insulated-gate depletion (normally on) type;
- type C: insulated-gate enhancement (normally off) type.
The main changes with respect to the previous edition are listed below.
a) "Clause 3 Classification" was moved and added to Clause 1.
b) "Clause 4 Terminology and letter symbols" was divided into "Clause 3 Terms and definitions" and "Clause 4 Letter symbols" was amended with additions and deletions.
c) Clause 5, 6 and 7 were amended with necessary additions and deletions.
This publication is to be read in conjunction with IEC 60747-1:2006.
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归口单位: TC 47/SC 47E
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