SEMICONDUCTOR DEVICE, SILICON, VOLTAGE REFERENCE (TEMPERATURE-STABLE) TYPE 1N430A, 1N430B
1N430A、1N430B型参考电压（温度稳定）硅半导体器件

2004-03-24

Semiconductor Device, Silicon, Voltage Reference (Temperature-Stable) Type 1N430A, 1N430B
1N430A、1N430B型参考电压（温度稳定）硅半导体器件

2011-07-07

SEMICONDUCTOR DEVICE, SILICON, VOLTAGE REFERENCE (TEMPERATURE-STABLE) TYPE 1N430A, 1N430B
1N430A、1N430B型参考电压（温度稳定）硅半导体器件

1999-06-07

Semiconductor Device, Silicon, Voltage Reference (Temperature-Stable) Type 1N430A, 1N430B
1N430A、1N430B型参考电压（温度稳定）硅半导体器件

2017-05-05

SEMICONDUCTOR DEVICE, SILICON, VOLTAGE REFERENCE (TEMPERATURE-STABLE) TYPE 1N430A, 1N430B
半导体器件 硅 电压参考（温度稳定）型号1N430A 1N430B

1990-07-06

半导体分立器件 ２ＤＷ２３２～２３６型硅电压基准二极管详细规范
Semiconductor discrete device--Detail specification for silicon voltage reference diodes for Types 2DW232～236

1992-11-19

半导体分立器件 ２ＤＷ１４～１８型低噪声硅电压基准二极管详细规范
Semiconductor discrete device--Detail specification for lower noise for silicon voltage reference diode for Type 2DW14～18

1992-11-19

반도체 소자－개별 소자－제3부：신호(스위칭 포함) 및 정전압 다이오드－제2절：온도 보상형 정밀 기준 다이오드를 제외한 정전압 다이오드 및 전압 기준 다이오드의 개별 규격 지침
半导体器件分立器件第3部分:信号（包括开关）和稳压二极管第2节:调压二极管和电压基准二极管空白详细规范 不包括温度补偿精密基准二极管

2006-12-11

SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE TEMPERATURE COMPENSATED, TYPES 1N935B-1, 1N937B, 1N938B-1, 1N939B-1 (SUPERSEDING MIL-S-19500/156J)
半导体器件 二极管 硅 低电平电压参考温度补偿 类型1N935B-1、1N937B、1N938B-1和1N939B-1（取代MIL-S-19500/156J）

2001-04-12

Приборы полупроводниковые. Дискретные приборы. Часть 3. Сигнальные диоды (включая переключательные) и диоды-регуляторы тока и напряжения. Раздел 2. Форма технических условий на стабилитроны и опорные диоды, за исключением прецизионных опорных диодов с температурной компенсацией
半导体器件 离散设备 信号（包括开关）和稳压二极管 第2节电压调节器二极管和电压参考二极管的空白详细规范 不包括温度补偿精密参考二极管

Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference diodes
电子元件质量评定协调体系规范 半导体分立器件 空白详细规范 电压调节器二极管和电压参考二极管 不包括温度补偿精密参考二极管

1987-09-15

SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N4565A-1 THROUGH 1N4584A-1, AND 1N4565AUR-1 THROUGH 1N4584AUR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC, RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANT
半导体器件 二极管 硅 低电平电压参考 温度补偿 类型1N4565A-1到1N4584A-1 和1N4565AUR-1到1n4564ur-1 JAN JANTX JANTXV JANS JANHC和JANKC 辐射硬化（仅总剂量）类型JANT

2019-01-29

SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N941B-1, 1N943B-1, 1N944B-1, 1N945B-1, 1N946B-1, 1N941BUR-1, 1N943BUR-1, 1N944BUR-1, 1N945BUR-1, AND 1N946BUR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED
抗辐射的1N941B-1、1N943B-1、1N944B-1、1N945B-1、1N946B-1、1N941BUR-1、1N941BUR-1、1N943BUR-1、1N944BUR-1、1N945BUR-1和1N946BUR-1、JAN、JANTX、JANTXV和JANS型半导体器件 二极管 硅 电压基准 温度补偿

2019-01-17

SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE TEMPERATURE COMPENSATED, TYPES 1N935B-1, 1N937B-1, 1N938B-1, 1N939B-1, AND 1N940B-1, 1N935BUR-1, 1N937BUR-1, 1N938BUR-1, 1N939BUR-1, AND 1N940BUR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION
半导体器件 二极管 硅 低电平电压基准温度补偿 1N935B-1 1N937B-1 1N938B-1 1N939B-1和1N940B-1 1N935BUR-1 1N937BUR-1 1N938BUR-1 1N939BUR-1和1N940BUR-1型 JAN JANTX JANTXV和JANS 辐射

2019-01-16

SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N3154-1, THROUGH 1N3157-1, AND 1N3154UR-1 THROUGH 1N3157UR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM
半导体器件 二极管 硅 电压基准 温度补偿 类型1N3154-1 至1N3157-1 以及1N3154UR-1至1N3157UR-1 JAN JANTX JANTXV和JANS 抗辐射（仅总剂量）JANTXVM D L R F G H和JANSM

2019-01-18

SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE TEMPERATURE COMPENSATED, TYPES 1N935B-1, 1N937B-1, 1N938B-1, 1N939B-1, AND 1N940B-1, 1N935BUR-1, 1N937BUR-1, 1N938BUR-1, 1N939BUR-1, AND 1N940BUR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION
半导体器件 二极管 硅 低电平电压参考温度补偿 类型1N935B-1、1N937B-1、1N938B-1、3n939b-1和1N940B-1、1 n935bur-1、1 n937bur-1、1 n 938bur-1、1n 939bur-1和1 n940bur-1、JAN、JANTX、JANTXV和JANS 辐射

2021-01-19

SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N821-1, 1N823-1, 1N825-1, 1N827-1, AND 1N829-1, 1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1, AND 1N829UR-1, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC; RADIATION HARDEN
1N821-1、1N823-1、1N825-1、1N827-1和1N829-1、1N821UR-1、1N823UR-1、1N825UR-1、1N825UR-1、1N827UR-1和1N829UR-1、JAN、JANTX、JANS、JANHC和JANKC型温度补偿硅基准半导体器件；辐射硬化

2019-01-19

SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N821-1, 1N823-1, 1N825-1, 1N827-1, AND 1N829-1, 1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1, AND 1N829UR-1, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC; RADIATION HARDEN
半导体器件 二极管 硅 电压参考 温度补偿 类型1N821-1 1N823-1 1n225-1 1N827-1 和1N829-1 1n 821ur-1 1nn823ur-1 1 n825ur-1 1N827UR-1 和1 n829ur-1 JAN JANTX JANTXV JANS JANHC和JANKC；辐射硬化

2019-08-09

SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N4565A-1 THROUGH 1N4584A-1, AND 1N4565AUR-1 THROUGH 1N4584AUR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC, RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANT (SUPERSEDING MIL-PRF-19500/452H)
半导体器件 二极管 硅 低电平电压参考 温度补偿 类型1N4565A-1到1N4584A-1 和1N4565AUR-1到1n4564ur-1 JAN JANTX JANTXV JANS JANHC和JANKC 辐射硬化（仅总剂量）类型JANT（取代MIL-PRF-19500/452H）

2012-03-08

SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N4565A-1 THROUGH 1N4584A-1, AND 1N4565AUR-1 THROUGH 1N4584AUR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC, RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANT (SUPERSEDING MIL-PRF-19500/452H)
半导体器件 二极管 硅 低电平电压参考 温度补偿 类型1N4565A-1到1N4584A-1 和1N4565AUR-1到1n4564ur-1 JAN JANTX JANTXV JANS JANHC和JANKC 辐射硬化（仅总剂量）类型JANT（取代MIL-PRF-19500/452H）

2017-01-17