本标准推荐并描述了半导体二极管重要电气特性的测量方法。在本标准中，半导体二极管定义为:具有两个端子且呈现非线性电压-电流特性的半导体器件；在更受限制的用途中，一种具有不对称电压-电流特性的半导体器件，以单个p-n结为例。介绍了静态、小信号和脉冲参数的测试方法。本文考虑的许多术语已在AI E和IRE标准中规定，尤其是在60 IRE 28中。 SH和AI EE第4252号。

This Standard recommends and describes methods of measurement of the important electrical characteristics of semiconductor diodes. For the purpose of this Standard, a semiconductor diode is defined1 as: A semiconductor device having two terminals and exhibiting a nonlinear voltage--current characteristic; in more restricted usage, a semiconductor device which has the asymmetrical voltage--current characteristic exemplified by a single p-n junction. Methods of test are described for static, small-signal and pulse parameters. Many of the terms considered herein have been set down in AI E E and IRE Standards, particularly in 60 IRE 28.SH and AI EE No. 4252.