现行

MIL MIL-PRF-19500/657B Notice 1-Validation 1

Semiconductor Device, Field Effect, Radiation Hardened, Transistor Die, N and P-Channel, Silicon Various Types JANHC and JANKC
半导体器件 场效应 辐射硬化 晶体管管芯 N和P沟道 各种类型的硅JANHC和JANKC

2015-12-09

现行

MIL MIL-PRF-19500/657C

Semiconductor Device, Field Effect, Radiation Hardened, Transistor Die, N and P-Channel, Silicon Various Types JANHC and JANKC
半导体器件 场效应 抗辐射 晶体管管芯 N沟道和P沟道 硅各种类型的JANHC和JANKC

2020-03-10

现行

MIL MIL-PRF-19500/741A Notice 1-Validation 1

Semiconductor Device, Field Effect, Radiation Hardened (Total Dose and Single Event Effects) Transistor Die, N-Channel and P-Channel, Silicon, Various Types, JANHC and JANKC
半导体器件 场效应 辐射硬化（总剂量和单事件效应）晶体管管芯 N沟道和P沟道 硅 各种类型 JANHC和JANKC

2013-12-06

现行

MIL MIL-PRF-19500/741B

Semiconductor Device, Field Effect, Radiation Hardened (Total Dose and Single Event Effects) Transistor Die, N-Channel and P-Channel, Silicon, Various Types, JANHC and JANKC
半导体器件 场效应 抗辐射（总剂量和单粒子效应）晶体管管芯 N沟道和P沟道 硅 各种类型 JANHC和JANKC

2018-04-13

现行

MIL MIL-PRF-19500/741B Amendment 1

Semiconductor Device, Field Effect, Radiation Hardened (Total Dose and Single Event Effects) Transistor Die, N-Channel and P-Channel, Silicon, Various Types, JANHC and JANKC
半导体器件 场效应 辐射硬化（总剂量和单事件效应）晶体管管芯 N沟道和P沟道 硅 各种类型 JANHC和JANKC

2019-11-18

现行

MIL MIL-PRF-19500/659 Notice 2-Validation

Semiconductor Device, Field Effect Radiation Hardened Transistor, P-Channel Silicon Type 2N7440, and 2N7441 JANSD and JANSR
半导体器件 场效应辐射硬化晶体管 P沟道硅型2N7440和2N7441 JANSD和JANSR

2011-07-15

现行

MIL MIL-PRF-19500/659A Notice 1-Validation 1

Semiconductor Device, Field Effect Radiation Hardened Transistor, P-Channel Silicon Type 2N7440, and 2N7441 JANSD and JANSR
半导体器件 场效应辐射硬化晶体管 P沟道硅型2N7440和2N7441 JANSD和JANSR

2019-02-26

现行

MIL MIL-PRF-19500/633D Notice 1-Validation 1

Semiconductor Device, Field Effect Radiation Hardened Transistors, P-Channel Silicon, Types 2N7403 and 2N7404, JANSD and JANSR
半导体器件 场效应辐射硬化晶体管 P沟道硅 2N7403和2N7404型 JANSD和JANSR

2018-11-09

现行

MIL MIL-PRF-19500/633E

Semiconductor Device, Field Effect Radiation Hardened Transistors, P-Channel Silicon, Types 2N7403 and 2N7404, JANSD and JANSR
半导体器件 场效应抗辐射晶体管 P沟道硅 2N7403和2N7404型 JANSD和JANSR

2019-10-28

现行

MIL MIL-PRF-19500/659A

Semiconductor Device, Field Effect Radiation Hardened Transistor, P-Channel Silicon Type 2N7440, and 2N7441 JANSD and JANSR
半导体器件 场效应抗辐射晶体管 P沟道硅型2N7440 以及2N7441 JANSD和JANSR

2014-04-02

现行

MIL MIL-PRF-19500/638B Notice 2-Validation

Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel Silicon, Type 2N7410, JANSD and JANSR
半导体器件 场效应辐射硬化（总剂量和单一事件效应）晶体管 N沟道硅 2N7410 Jansd和Jansr

2016-05-24

现行

MIL MIL-PRF-19500/639A Notice 3-Validation

Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects)Transistor, P-Channel Silicon Type 2N7411 JANSD and JANSR
半导体器件 场效应辐射硬化（总剂量和单事件效应）晶体管 P沟道硅2N7411型JANSD和JANSR

2016-05-24

现行

MIL MIL-PRF-19500/639A Notice 2-Validation

Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects)Transistor, P-Channel Silicon Type 2N7411 JANSD and JANSR
半导体器件 场效应辐射硬化（总剂量和单事件效应）晶体管 P沟道硅2N7411型JANSD和JANSR

2011-07-15

现行

MIL MIL-PRF-19500/632B Notice 1-Validation

Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel Silicon, Types 2N7399, 2N7400, 2N7401, and 2N7402, JANSD and R
半导体器件 场效应辐射硬化晶体管 N沟道硅 2N7399、2N7400、2N7401和2N7402型 JANSD和R

2011-07-15

现行

MIL MIL-PRF-19500/704F Amendment 1

Semiconductor Device, Field Effect Radiation Hardened Transistor, N-Channel, Silicon, Types 2N7485U3, 2N7486U3, 2N7487U3, and 2N7555U3 JANTXVR and JANSR
半导体器件 场效应辐射硬化晶体管 N沟道 硅 2N7485U3、2N7486U3、2N7487U3和2N7555U3型JANTXVR和JANSR

2019-07-17

现行

MIL MIL-PRF-19500/675F Amendment 2

Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel, Silicon Types 2N7463T2, 2N7464T2, 2N7463U5 and 2N7464U5 JANTXVR and JANSR
半导体器件 场效应辐射硬化晶体管 N沟道 硅类型2N7463T2 2N7464T2 2N7423U5和2N7464U5 JANTXVR和JANSR

2019-12-12

现行

MIL MIL-PRF-19500/632C Notice 1-Validation 1

Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel Silicon, Types 2N7399, 2N7400, 2N7401, and 2N7402, JANSD and R
半导体器件 场效应辐射硬化晶体管 N沟道硅 2N7399、2N7400、2N7401和2N7402型 JANSD和R

2019-02-26

现行

MIL MIL-PRF-19500/675F Amendment 1

Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel, Silicon Types 2N7463T2, 2N7464T2, 2N7463U5 and 2N7464U5 JANTXVR and JANSR
半导体器件 场效应辐射硬化晶体管 N沟道 硅类型2N7463T2 2N7464T2 2N7423U5和2N7464U5 JANTXVR和JANSR

2018-11-26

现行

MIL MIL-PRF-19500/634D Notice 1-Validation 1

Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel Silicon, Types 2N7405, 2N7406, 2N7407, and 2N7408, JANSD and JANSR
半导体器件 场效应辐射硬化晶体管 N沟道硅 2N7405、2N7406、2N7407和2N7408型 JANSD和JANSR

2018-11-07

现行

MIL MIL-PRF-19500/704B Amendment 1(amendment incorporated)

Semiconductor Device, Field Effect Radiation Hardened Transistor, N-Channel, Silicon, Types 2N7485U3, 2N7486U3, 2N7487U3, and 2N7555U3 JANTXVR and JANSR
半导体器件 场效应抗辐射晶体管 N沟道 硅 2N7485U3 2N7486U3 2N7487U3和2N7555U3型JANTXVR和JANSR

2010-01-20